In0.52Al0.48As/In0.53Ga0.47As higfets using novel 0.2 μm self-aligned T-gate technology

Gallium Arsenide and Related Compounds 1991 ◽

10.1201/9781003069638-55 ◽

2020 ◽

pp. 275-334

Author(s):

Yi-Jen Chan ◽

Dimitris Pavlidis ◽

Tim Brock

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