Gallium Arsenide and Related Compounds 1991
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9781003069638
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Facet formation observed in mombe of GaAs on a patterned substrate

2020 ◽  
pp. 19-118
Author(s):  
Y. Morishita ◽  
Y. Nomura ◽  
S. Goto ◽  
Y. Katayama ◽  
T. Isu
Keyword(s):  
Patterned Substrate ◽  
Facet Formation

Incorporation of interstitial carbon during growth of heavily carbon-doped GaAs by movcd and mombe

2020 ◽  
pp. 631-650
Author(s):  
G. E. Höfler ◽  
J. N. Baillargeon ◽  
J. L. Klatt ◽  
K. C. Hsieh ◽  
R. S. Averback ◽  
...  
Keyword(s):  
Interstitial Carbon ◽  
Carbon Doped

1.3 μm luminescence in (InAs) n /(GaAs) n strained quantum-well structures grown on GaAs

2020 ◽  
pp. 577-630
Author(s):  
E. J. Roan ◽  
K. Y. Cheng ◽  
P. J. Pearah ◽  
X. Liu ◽  
K. C. Hsieh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well

Thermally stable In-based ohmic contacts to p-type GaAs

2020 ◽  
pp. 179-222
Author(s):  
P.-E. Hallali ◽  
Masanori Murakami ◽  
W. H. Price ◽  
M. H. Norcott
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
P Type

New directions for III–V structures: metal/semiconductor heteroepitaxy

2020 ◽  
pp. 1-17
Author(s):  
J P Harbison ◽  
T Sands ◽  
C J Palmstrom ◽  
T L Cheeks ◽  
L T Florez ◽  
...  
Keyword(s):  
New Directions

Local structures in GaInP on GaAs studied by fluorescence-detected exafs

2020 ◽  
pp. 371-400
Author(s):  
Yoshikazu Takeda ◽  
Hirotaka Yamaguchi ◽  
Hiroyuki Oyanagi
Keyword(s):  
Local Structures

Photoluminescence analysis of C-doped npn AlGaAs/GaAs heterojunction bipolar transistors

2020 ◽  
pp. 335-370
Author(s):  
Z.H. Lu ◽  
M.C. Hanna ◽  
E.G. Oh ◽  
A. Majerfeld ◽  
P.D. Wright ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors
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