Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes

Silicon Carbide and Related Materials 2005 - Materials Science Forum ◽

10.4028/0-87849-425-1.843 ◽

2006 ◽

pp. 843-846

Author(s):

Yuki Negoro ◽

Tsunenobu Kimoto ◽

Hiroyuki Matsunami ◽

Gerhard Pensl

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