Silicon Carbide and Related Materials 2005 - Materials Science Forum
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Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC

2006 ◽  
pp. 983-986
Author(s):  
Kevin Matocha ◽  
Chris S. Cowen ◽  
Richard Beaupre ◽  
Jesse B. Tucker
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Thermal Oxide

Polytype Control in 6H-SiC Grown via Sublimation Method

2006 ◽  
pp. 95-98
Author(s):  
Xian Xiang Li ◽  
Shou Zhen Jiang ◽  
Xiao Bo Hu ◽  
Jie Dong ◽  
Juan Li ◽  
...  
Keyword(s):  
Sublimation Method

Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances

2006 ◽  
pp. 935-948 ◽  
Author(s):  
Sokrates T. Pantelides ◽  
Sanwu Wang ◽  
A. Franceschetti ◽  
Ryszard Buczko ◽  
M. Di Ventra ◽  
...  

Die Bonding Issues on Silicon Carbide Diodes

2006 ◽  
pp. 875-878
Author(s):  
Seung Yong Lee ◽  
Jang Sub Lee ◽  
Tae Hong Kim ◽  
Sung Yong Choi ◽  
Hak Jong Kim ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Die Bonding

An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts

2006 ◽  
pp. 859-862
Author(s):  
Matthew H. Ervin ◽  
Kenneth A. Jones ◽  
Un Chul Lee ◽  
Taniya Das ◽  
M.C. Wood
Keyword(s):  
Ohmic Contacts ◽  
Metal Contacts

Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence

2006 ◽  
pp. 847-850
Author(s):  
Jaime A. Freitas ◽  
Kenneth A. Jones ◽  
Michael A. Derenge ◽  
R.D. Vispute ◽  
Shiva S. Hullavarad
Keyword(s):  
Thermal Annealing ◽  
Ion Implanted
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