ABSTRACTThe interaction of nitrogen trifluoride (NF3) with silicon (Si) surfaces has been investigated by x-ray photoelectron spectroscopy (XPS). Si (100) surfaces were subjected to plasmas created by NF3 gas mixtures and ion bombardment from NF3-generated ion beams as a means of approximating the ion component of plasma processing under controlled conditions. NF 3 plasma processing has lead to the appearance of an interesting high binding energy component in F 1s XPS spectra. Investigation into the mechanism responsible for the high binding energy component suggests that the unusual component is directly influenced by diluent gas ions in the gas mixtures. It is postulated that the high binding energy component is the result of neutral fluorine incorporated in the Si lattice as a result of an ion damage mechanism.
