Materials Fundamentals of Gate Dielectrics
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Methodology for Development of High-κ Stacked Gate Dielectrics on III–V Semiconductors

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_12 ◽

2006 ◽

pp. 403-467 ◽

Author(s):

Matthias Passlack

Keyword(s):

Gate Dielectrics

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Thermodynamics of Oxide Systems Relevant to Alternative Gate Dielectrics

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_3 ◽

2006 ◽

pp. 57-108 ◽

Author(s):

Alexandra Navrotsky ◽

Sergey V. Ushakov

Keyword(s):

Gate Dielectrics ◽

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Electronic Structure and Chemical Bonding in High-k Transition Metal and Lanthanide Series Rare Earth Alternative Gate Dielectrics: Applications to Direct Tunneling and Defects at Dielectric Interfaces

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_4 ◽

2006 ◽

pp. 109-177

Author(s):

Gerald Lucovsky

Keyword(s):

Electronic Structure ◽

Transition Metal ◽

Chemical Bonding ◽

Gate Dielectrics ◽

Direct Tunneling ◽

Lanthanide Series ◽

High K ◽

Dielectric Interfaces

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Mechanistic Studies of Dielectric Growth on Silicon

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_11 ◽

2006 ◽

pp. 367-401 ◽

Author(s):

Martin M. Frank ◽

Yves J. Chabal

Keyword(s):

Mechanistic Studies

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Dielectric Properties of Simple and Complex Oxides from First Principles

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_6 ◽

2006 ◽

pp. 215-247 ◽

Author(s):

U.V. Waghmare ◽

K.M. Rabe

Keyword(s):

Dielectric Properties ◽

First Principles ◽

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Functional Structures

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_10 ◽

2006 ◽

pp. 349-365

Author(s):

Matt Copel

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The Interface Phase and Dielectric Physics for Crystalline Oxides on Semiconductors

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_8 ◽

2006 ◽

pp. 291-312

Author(s):

Rodney Mckee

Keyword(s):

Interface Phase ◽

Crystalline Oxides

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Materials and Physical Properties of High-K Oxide Films

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_1 ◽

2006 ◽

pp. 1-36

Author(s):

Ran Liu

Keyword(s):

Physical Properties ◽

Oxide Films ◽

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IVb Transition Metal Oxides and Silicates: An Ab Initio Study

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_7 ◽

2006 ◽

pp. 249-290 ◽

Author(s):

Gian-Marco Rignanese

Keyword(s):

Transition Metal ◽

Metal Oxides ◽

Ab Initio ◽

Transition Metal Oxides ◽

Ab Initio Study

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Device Principles of High-K Dielectrics

Materials Fundamentals of Gate Dielectrics ◽

10.1007/1-4020-3078-9_2 ◽

2006 ◽

pp. 37-55 ◽

Author(s):

Kurt Eisenbeiser

Keyword(s):

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