Study on the wear mechanisms and rock destruction of core surface set bit in drilling for solid mineral exploration

In this paper, the authors present some research results of wearing process and rock destruction by diamond grit of core bit depending on drilling regime, rock hardness, diamond grit strength, etc. through the simulation of the interaction effect between diamond grit attached to the core bit and the rock. The relationship of the wear rate and rate of penetration of diamond core bit to the rotation per minute has been tested. On the basis of the research results, the authors have proposed solutions to select the appropriate technology for diamond drilling to improve the efficiency of solid mineral exploration in Vietnam.

Experiment and Smooth Particle Hydrodynamics Simulation for the Wear Characteristics of Single Diamond Grit Scratching on Sapphire

Abrasive single crystal diamond (SCD) grit is widely used in the machining process of sapphire. The wear of SCD grit has a significant influence on the surface quality of sapphire. In this paper, smooth particle hydrodynamics (SPH) method is employed to reveal the wear mechanism of SCD grit with Steinberg constitutive equation and Grüneisen state equation. The wear morphology, wear volume and scratching forces are measured and analyzed by combination of SPH simulations and experiments. The results show that the scratching forces fluctuate in a certain range and decrease with the increasing of workpiece material removal volume. Different degrees of cleavage and fracture appear in the front and rear of SCD grit. The shear stress and extrusion stress are the main stresses of SCD grit during the scratching process. The wear progress and wear form are mainly determined by the stress state. Different stress state leads to different wear progress of the SCD grit. The SPH method is able to reflect and illustrate the wear characteristics of SCD grit scratching on sapphire.

Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime

Chemical–mechanical polishing (CMP) is a process that planarizes semiconductor surfaces and is essential for the manufacture of highly integrated devices. In CMP, pad conditioning using a disk with diamond grit is adopted to maintain the surface roughness of the polishing pad and remove polishing debris. However, uneven pad wear by conditioning is unavoidable in CMP. In this study, we propose a contact-area-changeable conditioning system and utilize it to conduct a preliminary study for improving pad lifetime. Using the conventional conditioning method (Case I), the material removal rate (MRR) decreased rapidly after 12 h of conditioning and the within-wafer non-uniformity (WIWNU) increased. However, the results of conditioning experiments show that when using a contact-area-changeable conditioning system, uniform pad wear can be obtained in the wafer–pad contact area and the pad lifetime can be extended to more than 20 h. Finally, the newly proposed conditioning system in this study may improve the CMP pad lifetime.

The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding

Subsurface damage (SSD) produced in a grinding process will affect the performance and operational duration of single-crystal silicon. In order to reduce the subsurface damage depth generated during the grinding process by adjusting the process parameters (added), experiments were designed to investigate the influence of machining factors on SSD. This included crystal orientation, diamond grit size in the grinding wheel, peripheral speed of the grinding wheel, and feeding with the intention to optimize the parameters affecting SSD. Compared with isotropic materials such as glass, we considered the impact of grinding along different crystal directions <100> and <110> on subsurface damage depth (added). The Magnetorheological Finishing (MRF) spot technique was used to detect the depth of SSD. The results showed that the depth of SSD in silicon increased with the size of diamond grit. SSD can be reduced by either increasing the peripheral speed of the grinding wheel or decreasing the feeding rate of the grinding wheel in the <100> crystal orientation, if the same size of diamond grit was employed. In addition, we proposed a modified model around surface roughness and subsurface crack depth, which considered plastic and brittle deformation mechanisms and material properties of different crystal orientations. When the surface roughness (RZ) exceeded the brittle-plastic transition’s critical value RZC (RZC<100> > 1.5 μm, RZC<110> > 0.8 μm), cracks appeared on the subsurface. The experimental results were consistent with the predicted model, which could be used to predict the subsurface cracks by measuring the surface roughness. However, the model only gives the approximate range of subsurface defects, such as dislocations. The morphology and precise depth of plastic deformation subsurface defects, such as dislocations generated in the fine grinding stage, needed to be inspected by transmission electron microscopy (TEM), which were further studied.

Edge Grinding Characteristics of Display Glass Substrate

Display glass substrate as a brittle material is very challenging to machine due to its excellent physical, mechanical, electrical, and optical properties such as high hardness, high strength, high wear resistance, good fracture toughness, good chemical stability, and good thermal stability. On the basis of Griffith fracture mechanics, our theoretical analysis indicated that edge grinding of the display glass substrate is under brittle mode when grinding with the given conditions, which was verified by the experimental studies of ground glass edge surface topography and fractured surface obtained. Grinding force (Fy) in the vertical direction was much larger than grinding force (Fx) in the horizontal direction, causing a large compressive stress acting on the grinding glass edge. Grinding torque was slightly increased with the increase of grinding speed. Grinding temperature was very high when measured under dry grinding compared with measurement under high-pressure coolant. Grinding of glass substrate edge was performed partially under ductile mode machining in the experimental conditions, which can be attributed to and contributed by those micro cutting edges generated by the fractured diamond grit on the grinding wheel surface.

Novel Abrasive-Impregnated Pads and Diamond Plates for the Grinding and Lapping of Single-Crystal Silicon Carbide Wafers

In this study, special ceramic grinding plates impregnated with diamond grit and other abrasives, as well as self-made lapping plates, were used to prepare the surface of single-crystal silicon carbide (SiC) wafers. This novel approach enhanced the process and reduced the final chemical mechanical planarization (CMP) polishing time. Two different grinding plates with pads impregnated with mixed abrasives were prepared: one with self-modified diamond + SiC and a ceramic binder and one with self-modified diamond + SiO2 + Al2O3 + SiC and a ceramic binder. The surface properties and removal rate of the SiC substrate were investigated and a comparison with the traditional method was conducted. The experimental results showed that the material removal rate (MRR) was higher for the SiC substrate with the mixed abrasive lapping plate than for the traditional method. The grinding wear rate could be reduced by 31.6%. The surface roughness of the samples polished using the diamond-impregnated lapping plate was markedly better than that of the samples polished using the copper plate. However, while the surface finish was better and the grinding efficiency was high, the wear rate of the mixed abrasive-impregnated polishing plates was high. This was a clear indication that this novel method was effective and could be used for SiC grinding and lapping.