InGaN mini-laser diode arrays with cw output power of 500 mW

2011 ◽  
Vol 8 (7-8) ◽  
pp. 2348-2350 ◽  
Author(s):  
Katarzyna Holc ◽  
Agnieszka Sarzyńska ◽  
Michał Boćkowski ◽  
Robert Czernecki ◽  
Michał Leszczyński ◽  
...  
MRS Advances ◽  
2016 ◽  
Vol 1 (2) ◽  
pp. 103-108 ◽  
Author(s):  
Piotr Perlin ◽  
Szymon Stańczyk ◽  
Steve Najda ◽  
Tadek Suski ◽  
Przemek Wiśniewski ◽  
...  

ABSTRACTWe demonstrated the fabrication of 10 emitters InGaN laser diode array of the maximum output power of 9 W at 420 nm. The device as a whole has the differential efficiency of above 1 W/A. The maximum output power is limited to 9 W (pulse operation) by catastrophic mirror damage or to around 5 W in CW operation by thermal roll-over. Larger arrays with stripes width of around 15 µm and numbers of emitters up to 20 should enable reaching 20 W, which is suitable for light engine of desktop projectors and a building block of cinema theater projectors.


1993 ◽  
Author(s):  
Bernard Groussin ◽  
Francois Pitard ◽  
Alain Parent ◽  
Claude Carriere

1992 ◽  
Author(s):  
David G. Mehuys ◽  
Jo S. Major, Jr. ◽  
David F. Welch ◽  
Donald R. Scifres

1993 ◽  
Vol 29 (4) ◽  
pp. 370 ◽  
Author(s):  
B. Groussin ◽  
A. Parent ◽  
C. Carrière ◽  
F. Pitard

1996 ◽  
Vol 24 (Supplement) ◽  
pp. 85-88
Author(s):  
H. Kan ◽  
T. Kanzaki ◽  
H. Miyajima ◽  
Y. Ito ◽  
K. Matsui ◽  
...  

1991 ◽  
Vol 27 (5) ◽  
pp. 464 ◽  
Author(s):  
D.W. Nam ◽  
R.R. Craig ◽  
D.G. Mehuys ◽  
D.F. Welch

1990 ◽  
Author(s):  
Masamichi Sakamoto ◽  
David F. Welch ◽  
John G. Endriz ◽  
Erik P. Zucker ◽  
Donald R. Scifres

Sign in / Sign up

Export Citation Format

Share Document