Grain Filters

Author(s):  
Vicent Caselles ◽  
Pascal Monasse
Keyword(s):  
2001 ◽  
Vol 685 ◽  
Author(s):  
Barry D. van Dijk ◽  
Paul Ch. Van der Wilt ◽  
G. J. Bertens ◽  
Lis.K. Nanver ◽  
Ryoichi Ishihara

AbstractThin film transistors (TFTs) are fabricated inside a large, location-controlled, silicon grain, fabricated with the grain-filter method. In a first experiment TFTs with high field-effect mobility for electrons of 430 cm2/Vs are fabricated. The off-current and subthreshold swing have high values of 60 pA and 1.2 V/dec, respectively. The grain-filter is improved by doping the channel and by planarizing the grain-filter by chemical mechanical polishing (CMP). TFTs fabricated in CMP-planarized grain-filters have mobility, off-current, and subthreshold swing of 430 cm2/Vs, 0.3 pA, and 0.29 V/dec, respectively, which compares well with the characteristics for SOI TFTs.


2007 ◽  
Vol 48 (3) ◽  
pp. 161-163
Author(s):  
N. M. Samokhvalov
Keyword(s):  

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