Principles of Lasers and Laser-Surface Interactions

2013 ◽  
pp. 1-21
Author(s):  
Rashid A. Ganeev
1966 ◽  
Author(s):  
J. F. Ready ◽  
G. E. Bernal

1966 ◽  
Author(s):  
J. F. Ready ◽  
G. E. Bernal ◽  
L. P. Levine

1983 ◽  
Vol 29 ◽  
Author(s):  
P. Brewer ◽  
S. Halle ◽  
R. M. Osgood

ABSTRACTGas-phase UV-initiated (193 nm) photodissociations of methyl (CH3) and trifluoromethyl (CF3) containing compounds have been investigated for the dry etching of single crystal GaAs substrates. Etching rates of greater than 1 μ/min. have been observed. Etching rates and surface profiles will be discussed in terms of crystal orientation, reactive etching fragments, and laser-surface interactions. Products of the etching reactions have been examined by UV absorption, mass spectrometry and laser-induced fluorescence techniques. Applications to large scale and micron dimension etching processes will be briefly discussed.


1968 ◽  
Author(s):  
J. F. Ready ◽  
E. Bernal G. ◽  
L. T. Shepherd

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