Ab initio study of helium in Li4SiO4 crystals: Electronic properties, migration, and vacancy capture mechanism

Author(s):  
Ruijie Zhang ◽  
Lei Wan ◽  
Huagang Xiao ◽  
Jiangnan Wang ◽  
Chengjian Xiao ◽  
...  
2015 ◽  
Vol 118 (10) ◽  
pp. 104306 ◽  
Author(s):  
Bob Schoeters ◽  
Ortwin Leenaerts ◽  
Geoffrey Pourtois ◽  
Bart Partoens

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