Bottom-up nanoscale patterning and selective deposition on silicon nanowires

We demonstrate a bottom-up process for programming the deposition of coaxial thin films aligned to the underlying dopant profile of semiconductor nanowires. Our process synergistically combines three distinct methods – vapor-liquid-solid (VLS) nanowire growth, selective coaxial lithography via etching of surfaces (SCALES), and area-selective atomic layer deposition (AS-ALD) – into a cohesive whole. Here, we study ZrO2 on Si nanowires as a model system. Si nanowires are first grown with an axially modulated n-Si/i-Si dopant profile. SCALES then yields coaxial poly(methyl methacrylate) (PMMA) masks on the n-Si regions. Subsequent AS-ALD of ZrO2 occurs on the exposed i-Si regions and not on those masked by PMMA. We show the spatial relationship between nanowire dopant profile, PMMA masks, and ZrO2 films, confirming the programmability of the process. The nanoscale resolution of our process coupled with the plethora of available AS-ALD chemistries promises a range of future opportunities to generate structurally complex nanoscale materials and electronic devices using entirely bottom-up methods.

Silicon nanorod formation from powder feedstock through co-condensation in plasma flash evaporation and its feasibility for lithium-ion batteries

Si nanowires/nanorods are known to enhance the cycle performance of the lithium-ion batteries. However, viable high throughput production of Si nanomaterials has not yet attained as it requires in general expensive gas source and low-rate and multiple-step approach. As one of the potential approaches, in this work, we report the fast-rate Si nanorod synthesis from low-cost powder source by the modified plasma flash evaporation and the fundamental principle of structural formation during gas co-condensation. In this process, while Si vapors are formed in high temperature plasma jet, molten copper droplets are produced separately at the low temperature region as catalysts for growth of silicon nanorods. Si rods with several micrometers long and a few hundred of nanometers in diameter were produced in a single process at rates up to 40 µm s−1. The growth of the Si nanorods from powder source is primarily characterized by the vapor–liquid–solid growth which is accelerated by the heat extraction at the growth point. The battery cells with the Si nanorods as the anode have shown that a higher capacity and better cyclability is achieved for the nanorods with higher aspect ratios.

Silicon nanowires based adsorption sensors for CO and NH3 detection

Carbon monoxide and ammonia are inorganic agents found both in nature and in the human body, which is of great interest for modern sensing. The work is aimed at fabrication and study of precise, technological and relatively cheap multi-environment sensors based on Si nanowires possessing high surface area compatible with a gas and liquid medium for CO and NH3 detection, respectively. We demonstrate the potential of the approach for detection of both ammonia and CO at concentrations as low as 10ppm. The effects of the adsorbates from water and air are discussed.

Improvements of Electrical Characteristics in Poly-Si Nanowires Thin-Film Transistors with External Connection of a BiFeO3 Capacitor

By a sol–gel method, a BiFeO3 (BFO) capacitor is fabricated and connected with the control thin film transistor (TFT). Compared with a control thin-film transistor, the proposed BFO TFT achieves 56% drive current enhancement and 7–28% subthreshold swing (SS) reduction. Moreover, the effect of the proposed BiFeO3 capacitor on IDS-VGS hysteresis in the BFO TFT is 0.1–0.2 V. Because dVint/dVGS > 1 is obtained at a wide range of VGS, it reveals that the incomplete dipole flipping is a major mechanism to obtain improved SS and a small hysteresis effect in the BFO TFT. Experimental results indicate that sol-gel BFO TFT is a potential candidate for digital application.