Improved Wear-Resistant Performance of Epoxy Resin Composites Using Ceramic Particles

This work investigated the effects of using a new fabrication technique to prepare polymer composite on the wear-resistant performance of epoxy resin composites under dry friction conditions. Polymer composite samples with different weight contents of silicon carbide (SiC) particles were manufactured. This paper addresses the wear behavior of the obtained samples. With the suggested technique, the samples were prepared from epoxy/silicon carbide particles using a layer of thin kraft paper to prevent the sedimentation of the ceramic particles and to control the weight content of ceramic in the polymer. Kraft paper was used as a layer in the polymer composite. The hardness, wear resistance, and water absorption capacity of the produced epoxy composite samples prepared using the kraft paper technique were evaluated. The morphology of epoxy composite samples showed a significant improvement in the ceramic distribution and enhancement of interface bonding between ceramic and the polymer. The hardness values of the developed polymer composites were enhanced by up to 42.8%, which was obtained at 18 wt.% SiC particles. Increasing the ceramic content in the epoxy also led to the enhancement of wear resistance compared with pure epoxy. The results of the microstructure study also showed that the kraft paper layers helped in maintaining the distribution of the ceramic particles according to the previously specified content in each layer in the sample. Wear tests showed that the wear rate of the polymer composite decreased with the increase in the ceramic content. This study provides a new recycling method for using old kraft paper in polymer composite manufacturing to improve the distribution of ceramic particles in the polymer matrix.

Effect of Silicon Carbide Nanoparticles on the Friction-Wear Properties of Copper-Based Friction Discs

To study the influence of nano-additives on the friction-wear characteristics of friction materials, the nano-sized silicon carbide particles which have excellent chemical and physical properties are considered to add in composite to form the modified friction material. The influence of the silicon carbide nanoparticles (SCN) on the friction-wear characteristics of copper-based friction materials (CBFM) is investigated via the SAE#2 (made in Hangzhou, China) clutch bench test with the applied pressure, rotating speed, and automatic transmission fluid (ATF) temperature taken into account. Moreover, the variations of friction torque and temperature are considered to evaluate the friction performance, and the variable coefficient is employed to describe the friction stability. The wear characteristics of friction materials are investigated by the disc changes in thickness and micro-morphology. The results show that the CBFM with SCN can provide a higher friction torque, which increased by 30% to 50% compared with CBFM. The variable coefficient of CBFM with SCN changes from 674 to 52 with the rotating speed raised from 600 rpm to 3000 rpm, which shows that the friction stability is relatively worse. Furthermore, the micromorphology shows that the CBFM with SCN has lower porosity and surface roughness, which increases the microscopic contact area and the coefficient of friction (COF). Simultaneously, the reduction in porosity also leads to a decrease in the cooling quality, bringing about a rapid temperature rise. Thus, the wear amount of CBFM with SCN increases significantly, especially for the friction disc in the axial middle position.

Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions

The influence of microindentation on the electroluminescence of silicon carbide was studied in forward-biased 4H SiC p-i-n junctions. Four spectral regions at approximately 390, 420, 445 and 500 nm initially observed on virgin samples strongly depend, in regard to magnitude, on the condition of the starting die. These spectral regions may be interpreted as arising from either phonon-assisted band-to-band transitions or from defect-related transitions. The same SiC die were then subjected to mechanical damage brought about by a series of closely spaced microindentations directed approximately perpendicular to the c-axis. The spectra taken after a first set and subsequently a second set of microindentations are distinct from the initial spectra in all cases, and differences are interpreted as being due to the modification of existing defects or additional defects being generated mechanically. The influence of microindentation on the ideality factor is measured and discussed. Measured light flux with respect to a standard light source is also shown at each microindentation stage.

Terahertz-wave detector on silicon carbide platform

We developed a novel terahertz-wave detector fabricated on a SiC platform implementing an InP/InGaAs Fermi-level managed barrier (FMB) diode. The FMB diode epi-layers were transferred on a SiC substrate, and a waveguide coupler and filters were monolithically integrated with an FMB diode. Then, fabricated detector chip was assembled in a fundamental mixer module with a WR-3 rectangular-waveguide input port. It exhibited a minimum noise equivalent power as low as 3e-19 W/Hz at around 300 GHz for a local oscillator power of only 30 microwatts.

Defect- and H-Free Stoichiometric Silicon Carbide by Thermal CVD from the Single Source Precursor Trisilacyclohexane

Stoichiometric silicon carbide (SiC) thin films were grown using thermal chemical vapor deposition (TCVD) from the single source precursor 1,3,5-trisilacyclohexane (TSCH) on c-Si (100) substrates within an optimized substrate temperature window ranging from 650 to 850 °C. X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy (FTIR) analyses revealed that the as-deposited films consisted of a Si-C matrix with a Si:C ratio of ~1:1. FTIR and photoluminescence (PL) spectrometry studies showed that films deposited ≥ 750 °C were defect- and H-free within the detection limit of the techniques used, while ellipsometry measurements yielded an as-grown SiC average refractive index of ~2.7, consistent with the reference value for the 3C-SiC phase. The exceptional quality of the films appears sufficient to overcome limitations associated with structural defects ranging from failure in high voltage, high temperature electronics to 2-D film growth. TSCH, a liquid at room temperature with good structural stability during transport and handling as well as high vapor pressure (~10 torr at 25 °C), provides a viable single source precursor for the growth of stoichiometric SiC without the need for post-deposition thermal treatment.

Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electric field (>2 MV/cm) enable superior performances to be obtained with respect to the traditional silicon devices. Hence, today, a variety of diodes and transistors based on SiC and GaN are already available in the market. For the fabrication of these electronic devices, selective doping is required to create either n-type or p-type regions with different functionalities and at different doping levels (typically in the range 1016–1020 cm−3). In this context, due to the low diffusion coefficient of the typical dopant species in SiC, and to the relatively low decomposition temperature of GaN (about 900 °C), ion implantation is the only practical way to achieve selective doping in these materials. In this paper, the main issues related to ion implantation doping technology for SiC and GaN electronic devices are briefly reviewed. In particular, some specific literature case studies are illustrated to describe the impact of the ion implantation doping conditions (annealing temperature, electrical activation and doping profiles, surface morphology, creation of interface states, etc.) on the electrical parameters of power devices. Similarities and differences in the application of ion implantation doping technology in the two materials are highlighted in this paper.

Synthetic recovery of impulse propagation in myocardial infarction via silicon carbide semiconductive nanowires

Myocardial infarction causes 7.3 million deaths worldwide, mostly for fibrillation that electrically originates from the damaged areas of the left ventricle. Conventional cardiac bypass graft and percutaneous coronary interventions allow reperfusion of the downstream tissue but do not counteract the bioelectrical alteration originated from the infarct area. Genetic, cellular, and tissue engineering therapies are promising avenues but require days/months for permitting proper functional tissue regeneration. Here we engineered biocompatible silicon carbide semiconductive nanowires that synthetically couple, via membrane nanobridge formations, isolated beating cardiomyocytes over distance, restoring physiological cell-cell conductance, thereby permitting the synchronization of bioelectrical activity in otherwise uncoupled cells. Local in-situ multiple injections of nanowires in the left ventricular infarcted regions allow rapid reinstatement of impulse propagation across damaged areas and recover electrogram parameters and conduction velocity. Here we propose this nanomedical intervention as a strategy for reducing ventricular arrhythmia after acute myocardial infarction.