PULSED LASER ABLATION—THIN FILM DEPOSITION OF POLYETHYLENE OXIDE

1998 ◽  
Vol 59 (8) ◽  
pp. 1271-1277 ◽  
Author(s):  
P Manoravi ◽  
M Joseph ◽  
N Sivakumar
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Polyethylene Oxide ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

AIN thin film deposition by pulsed laser ablation of Al in NH3

1997 ◽  
Vol 295 (1-2) ◽  
pp. 77-82 ◽  
Author(s):  
A. Giardini Guidoni ◽  
A. Mele ◽  
T.M. Di Palma ◽  
C. Flamini ◽  
S. Orlando ◽  
...  
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition

Thin-Film Deposition Via Pulsed Laser Ablation

1996 ◽  
Vol 441 ◽  
Author(s):  
V. G. Panayotov ◽  
M. C. Kelly ◽  
G. G. Gomlak ◽  
T. L. T. Birdwhistell ◽  
B. D. Koplitz
Keyword(s):  
Thin Film ◽  
Laser Ablation ◽  
Experimental Approach ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Ionic Species ◽  
Film Deposition ◽  
Original Sample ◽  
532 Nm

AbstractWe report on a novel experimental approach for thin-film deposition via pulsed laser ablation. A combination of design features including the incorporation of original sample manipulation methods as well as enhanced analytical capabilities allow for experimental control and flexibility for thin-film deposition studies of a variety of materials. Here, the application is illustrated with a study of 532 nm pulsed laser ablation and subsequent deposition of CdTe.Conditions have been found that produce a mildly energetic ablation plume, and the average kinetic energies for the neutral and ionic ablation species in the plume have been determined to be approximately 2 and 11 eV, respectively. It has been shown that in the presence of an electric field the ionic species can be diverted away from the detector (and subsequently from the eventual deposit). Thin film deposits clearly reveal an increase in the number of sub-micron particles when direct ablation ions contribute to the deposition. The possibility for extraction of ablation ions and preparation of ablation plumes of neutrals only has been clearly demonstrated.

Semiconductor Epitaxy and Bandgap Engineering by Pulsed Laser Ablation

1990 ◽  
Vol 191 ◽  
Author(s):  
Jeff T. Cheung ◽  
H. Sankur
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Dielectric Films ◽  
Semiconductor Films ◽  
Bandgap Engineering ◽  
External Energy ◽  
External Energy Source

IntroductionRecently, Pulsed Laser Ablation [1] has been receiving much attention as a viable thin film deposition technique due to its success in demonstrating excellent high Tc superconducting thin films, although the use of laser radiation as an external energy source to vaporize materials for vacuum deposition was first carried out more than twenty five years ago [2].Most of the early work was focused on dielectric films, a few sporadic reports on III-V compounds [3], some investigations on II-V compounds [4] and elemental semiconductors [5]. Since material qualities were inferior to those grown by Molecular Beam Epitaxy (MBE) at that time, this area of work was largely ignored. After further refinement, the quality of semiconductor films grown by Pulsed Laser Ablation is now comparable to those by MBE, most notably in HgCdTe, CdTe, their superlattices [6] as well as Ge epitaxy [7].

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