Thin Films
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Author(s):  
Gürkan Kaya ◽  
Tevfik Oğuzhan Ergüder ◽  
İlyas Hacısalihoğlu ◽  
Emre Mandev ◽  
Eyüphan Manay ◽  
...  

2021 ◽  
Author(s):  
jie jiang ◽  
Lei Liu ◽  
Kuo Ouyang ◽  
Zhouyu Chen ◽  
Shengtao Mo ◽  
...  

Abstract With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin films are extensively used in micro-sensors and other devices. In this study, the sol-gel process was used to fabricate Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands. The experimental consequences demonstrate that all the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr0.52Ti0.48)O3 thin films modified by Pb(ZrxTi1−x)O3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric field decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands are the most optimal when the x is 0.52. This paper provides a new technique for optimizing the electrical properties of PZT thin films, which is of great significance for breaking through the bottleneck of the development of ferroelectric memory.


Langmuir ◽  
2021 ◽  
Author(s):  
Cornelius O. Audu ◽  
David Chen ◽  
Chung-Wei Kung ◽  
Randall Q. Snurr ◽  
SonBinh T. Nguyen ◽  
...  

Author(s):  
Jade Poisson ◽  
Alexander M. Polgar ◽  
Michele Fromel ◽  
Christian W. Pester ◽  
Zachary M. Hudson

2021 ◽  
pp. 138862
Author(s):  
Alexandra Steffen ◽  
Artur Glavic ◽  
Thomas Gutberlet ◽  
Haile Ambaye ◽  
Jürgen Schubert ◽  
...  

AIP Advances ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 085302
Author(s):  
Claudette Mansour ◽  
Mohammed Benwadih ◽  
Christine Revenant

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 921
Author(s):  
Ashwin Kumar Saikumar ◽  
Sreeram Sundaresh ◽  
Shraddha Dhanraj Nehate ◽  
Kalpathy B. Sundaram

Thin films of CuGa2O4 were deposited using an RF magnetron-sputtering technique for the first time. The sputtered CuGa2O4 thin films were post-deposition annealed at temperatures varying from 100 to 900 °C in a constant O2 ambience for 1.5 h. Structural and morphological studies were performed on the films using X-ray diffraction analysis (XRD) and a Field Emission Scanning Electron Microscope (FESEM). The presence of CuGa2O4 phases along with the CuO phases was confirmed from the XRD analysis. The minimum critical temperature required to promote the crystal growth in the films was identified to be 500 °C using XRD analysis. The FESEM images showed an increase in the grain size with an increase in the annealing temperature. The resistivity values of the films were calculated to range between 6.47 × 103 and 2.5 × 108 Ωcm. Optical studies were performed on all of the films using a UV-Vis spectrophotometer. The optical transmission in the 200–800 nm wavelength region was noted to decrease with an increase in the annealing temperature. The optical bandgap value was recorded to range between 3.59 and 4.5 eV and showed an increasing trend with an increase in the annealing temperature.


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