GaAs and InP HEMT and HBT MMIC production

Mapping Intimacies ◽

10.1049/ic:20000693 ◽

2000 ◽

Author(s):

D. Streit

Keyword(s):

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220–325-GHz 25-dB-Gain Differential Amplifier With High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2021.3061662 ◽

2021 ◽

pp. 1-1

Author(s):

Hiroshi Hamada ◽

Takuya Tsutsumi ◽

Adam Pander ◽

Hideaki Matsuzaki ◽

Hiroki Sugiyama ◽

...

Keyword(s):

Differential Amplifier ◽

Common Mode ◽

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A 670 GHz Integrated InP HEMT Direct- Detection Receiver for the Tropospheric Water and Cloud Ice (TWICE) Instrument

IEEE Transactions on Terahertz Science and Technology ◽

10.1109/tthz.2021.3083939 ◽

2021 ◽

pp. 1-1

Author(s):

Caitlyn Cooke ◽

Kevin Leong ◽

Alex Zamora ◽

Ben Gorospe ◽

Gerry X. B. Mei ◽

...

Keyword(s):

Direct Detection ◽

Cloud Ice ◽

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A 170–280 GHz InP HEMT low noise amplifier

2014 39th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz) ◽

10.1109/irmmw-thz.2014.6956402 ◽

2014 ◽

Author(s):

Alexis Zamora ◽

Kevin M. K. H. Leong ◽

Theodore Reck ◽

Goutam Chattopadhyay ◽

William Deal

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Noise Amplifier ◽

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235GHz Low insertion loss Modulator in InP HEMT technology

10.1109/irmmw-thz50926.2021.9566875 ◽

2021 ◽

Author(s):

Qianyu Zhang ◽

Fanzhong Meng ◽

Sen Gong ◽

Yaxin Zhang ◽

Ziqiang Yang

Keyword(s):

Insertion Loss ◽

Low Insertion Loss ◽

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0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307) ◽

10.1109/iciprm.2002.1014466 ◽

2003 ◽

Author(s):

R. Grundbacher ◽

R. Lai ◽

M. Barsky ◽

R. Tsai ◽

T. Gaier ◽

...

Keyword(s):

Low Noise ◽

Low Noise Amplifiers ◽

W Band ◽

X Band ◽

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Optical characterisation on the effect of doping concentration in InGaAs/InP HEMT structures

Microelectronic Engineering ◽

10.1016/s0167-9317(99)00494-3 ◽

2000 ◽

Vol 51-52 ◽

pp. 441-448 ◽

Author(s):

K. Radhakrishnan ◽

T.H.K. Patrick ◽

H.Q. Zheng ◽

P.H. Zhang ◽

S.F. Yoon

Keyword(s):

Doping Concentration ◽

Inp Hemt ◽

Effect Of Doping

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Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel

IEEE Electron Device Letters ◽

10.1109/led.2003.813357 ◽

2003 ◽

Vol 24 (6) ◽

pp. 378-380 ◽

Author(s):

Y.C. Chou ◽

D. Leung ◽

R. Lai ◽

R. Grundbacher ◽

M. Barsky ◽

...

Keyword(s):

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50-Gbit/s InP HEMT 4 : 1 multiplexer/1 : 4 demultiplexer chip set with a multiphase clock architecture

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2003.819205 ◽

2003 ◽

Vol 51 (12) ◽

pp. 2548-2554 ◽

Author(s):

K. Sano ◽

K. Murata ◽

H. Kitabayashi ◽

S. Sugitani ◽

H. Sugahara ◽

...

Keyword(s):

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Sub-10 ps Pulse Generator with Biphase Modulation Function in 0.13-μm InP HEMT

2006 European Radar Conference ◽

10.1109/eurad.2006.280345 ◽

2006 ◽

Author(s):

Y. Kawano ◽

Y. Nakasha ◽

T. Suzuki ◽

T. Ohki ◽

T. Takahashi ◽

...

Keyword(s):

Pulse Generator ◽

Modulation Function ◽

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A monolithic W-band three-stage LNA using 0.1 mu m InAlAs/InGaAs/InP HEMT technology

1993 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.1993.276886 ◽

2002 ◽

Author(s):

H. Wang ◽

R. Lai ◽

T.H. Chen ◽

P.D. Chow ◽

J. Velebir ◽

...

Keyword(s):

W Band ◽

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