Editorial: Semiconductor and Integrated Optoelectronics (SIOE) Conference 2006

2006 ◽  
Vol 153 (6) ◽  
pp. 275-275
Author(s):  
P. Smowton
Keyword(s):  
Integrated Optoelectronics

Amorphous silicon-based guided-wave passive and active devices for silicon integrated optoelectronics

1998 ◽  
Vol 4 (6) ◽  
pp. 997-1002 ◽  
Author(s):  
G. Cocorullo ◽  
F.G. Della Corte ◽  
R. de Rosa ◽  
I. Rendina ◽  
A. Rubino ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Guided Wave ◽  
Integrated Optoelectronics ◽  
Active Devices ◽  
Silicon Based

scholarly journals Active tuning of hybrid plasmonics in graphene-covered metallic nanotrench-=SUP=-*-=/SUP=-

2020 ◽  
Vol 46 (11) ◽  
pp. 14
Author(s):  
Noor Uddin ◽  
Qing Yang ◽  
Guangqing Du ◽  
Feng Chen ◽  
Huijing Li ◽  
...  
Keyword(s):  
Optoelectronic Devices ◽  
Electron System ◽  
Photonic Devices ◽  
Optical Characteristics ◽  
Integrated Optoelectronics ◽  
Graphene Electron ◽  
Graphene Structures

Abstract Graphene has recently emerged as a possible platform for integrated optoelectronics and hybrid photonic devices because of its promising electronic and optical characteristics. Here, we propose the active tuning of hybrid plasmonics in intrinsic graphene-based gold rectangle nanotrench by modifying the graphene electron system. We found that the plasmonics response in graphene thicknesses can be unprecedentedly tuned by altering the thickness of thick graphene covering nanotrench geometry. It is explained as the active plasmonics hybridization leading to the tunability of the enhanced e -field localized within the graphene-covered metallic nanotrench. This study can be useful for optoelectronic devices based on hybrid graphene structures at IR wavelengths.

Efficient imaging with integrated optoelectronics: II. Massively parallel analog vision chip

1998 ◽  
Author(s):  
Mark S. Schmalz ◽  
Gerhard X. Ritter ◽  
Joseph N. Wilson ◽  
Aureliu M. Porumbescu
Keyword(s):  
Massively Parallel ◽  
Integrated Optoelectronics ◽  
Vision Chip
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