Near-Infrared Heterojunction Field Modulated Phototransistors with Distinct Photodetection/Photostorage Switching Feature for Artificial Visuals

With the rising demand of recording, computing and image capture, advanced optoelectronic detection, storage and logic devices are highly pursued. Nevertheless, multi-functional vision chip based on infrared detection and memory switching has never been demonstrated. Here, by utilizing the electronic extraction layer ZnO and face-on orientation of D-A, we exhibit the broadband visible to near-infrared photo-response and photo-storage characters on graphene phototransistor. Functions as photodetection and photo-storage can be switched with the variation of gate voltage. The device demonstrates high photo-responsivity up to 1.88 × 106 A/W at 895 nm corresponding detectivity of 4.8 × 1012 Jones. Importantly, the rewritable and switching infrared optoelectronic memory function can be achieved with good retention over 104 s. The both retinomorphic vision and memorial preprocessing in artificial visual are simultaneously realized by photodetection/photostorage switching property. Such nearly all-solution processes in our phototransistors may open up the path for the large-scale and easy manufacturing infrared multifunctional bio-optoelectronic device.