Abstract Graphene has recently emerged as a possible platform for integrated optoelectronics and hybrid photonic devices because of its promising electronic and optical characteristics. Here, we propose the active tuning of hybrid plasmonics in intrinsic graphene-based gold rectangle nanotrench by modifying the graphene electron system. We found that the plasmonics response in graphene thicknesses can be unprecedentedly tuned by altering the thickness of thick graphene covering nanotrench geometry. It is explained as the active plasmonics hybridization leading to the tunability of the enhanced e -field localized within the graphene-covered metallic nanotrench. This study can be useful for optoelectronic devices based on hybrid graphene structures at IR wavelengths.
Wafer-scale integration of graphene for waveguide-integrated optoelectronics
