Hydrogen Passivation and Laser Doping for Silicon Solar Cells

2021 ◽  
2019 ◽  
Vol 675 ◽  
pp. 109-114 ◽  
Author(s):  
Jae Eun Kim ◽  
Se Jin Park ◽  
Ji Yeon Hyun ◽  
Hyomin Park ◽  
Soohyun Bae ◽  
...  

2019 ◽  
Author(s):  
Mickaël Lozac’h ◽  
Shota Nunomura ◽  
Hiroshi Umishio ◽  
Takuya Matsui ◽  
Koji Matsubara

1995 ◽  
Vol 378 ◽  
Author(s):  
R.R. Bilyalov ◽  
B.M. Abdurakhmanov

AbstractThe effect of hydrogen passivation on photovoltaic performance of 1 MeV electron irradiated polycrystalline cast silicon solar cells is described. These cells were processed on cast p-type boron doped polycrystalline silicon substrates using standard technology. Passivation was made by low-energy hydrogen ion implantation on the front side. Cells performance was measured as a function of fluence, and it was found that the hydrogenated cell had the higher radiation resistance.Defect behavior were studied using deep level transient spectroscopy and infra-red spectroscopy. It was shown that the concentration of vacancies (Ec −0,09 eV), divacancies (Ec −0,23 eV) and A-centers (Ec −0,18 eV) is significantly lower in hydrogenated samples. This consistency strengthens the belief that hydrogen interacts with vacancy-type defects to prevent formation of the secondary radiation defects. It is confirmed by IR-measurements.


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