Specular beam intensity behavior in reflection high‐energy electron diffraction during molecular beam epitaxial growth of Al0.3Ga0.7As on GaAs(100) and implications for inverted interfaces
1992 ◽
Vol 10
(4)
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pp. 1784
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1989 ◽
Vol 7
(4)
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pp. 714
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1995 ◽
Vol 156
(3)
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pp. 206-211
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