Specular beam intensity behavior in reflection high‐energy electron diffraction during molecular beam epitaxial growth of Al0.3Ga0.7As on GaAs(100) and implications for inverted interfaces

1987 ◽  
Vol 50 (26) ◽  
pp. 1909-1911 ◽  
Author(s):  
N. M. Cho ◽  
P. Chen ◽  
A. Madhukar
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