Successful production of non-neutral electron plasma of high density in the multi-ring trap

2008 ◽  
Vol 16 (3) ◽  
pp. 181-188 ◽  
Author(s):  
Tarek Mohamed
2007 ◽  
Vol 2 ◽  
pp. 045-045 ◽  
Author(s):  
Haruhiko SAITOH ◽  
Zensho YOSHIDA ◽  
Junji MORIKAWA ◽  
Sho WATANABE ◽  
Yoshihisa YANO ◽  
...  
Keyword(s):  

2011 ◽  
Vol 18 (5) ◽  
pp. 056102 ◽  
Author(s):  
H. Saitoh ◽  
Z. Yoshida ◽  
J. Morikawa ◽  
M. Furukawa ◽  
Y. Yano ◽  
...  
Keyword(s):  

1990 ◽  
Vol 65 (13) ◽  
pp. 1619-1622 ◽  
Author(s):  
A. M. Kriman ◽  
M. J. Kann ◽  
D. K. Ferry ◽  
R. Joshi

1985 ◽  
Vol 55 (1) ◽  
pp. 22-27 ◽  
Author(s):  
T. Kessler ◽  
H. Nahme ◽  
N. Schwentner ◽  
O. Dössel

Author(s):  
Antonio R. Sumagpang Jr ◽  
Frederick Ray I. Gomez

The technical paper presents a systematic and methodological approach to deal with a new product trend that will be successfully manufactured during assembly production ramp-up.  The project is intended to determine the required process flow and machine platforms for high-density and high-complexity scalable device. Critical processes are shown and top reject contributors are addressed through systematic method by using statistical tools and in-depth engineering analysis. The Scalable Package Passive Device is one of the newest and latest developed device in the plant, which functions as a diode for mobile and computer applications.  The device is considered high density as its 6” single wafer is equivalent to 400,000 units compared to conventional device consisting of only 1,000 units.  Moreover, it is considered as a device with high complexity as state-of-the-art platforms are needed to satisfy its output process.  Furthermore, the device has a very thin die and with the smallest total package dimension.  The process of assembly manufacturing includes a step cutting method of wafers, compression molding, and in-strip testing, which are unlikely to be found on other semiconductor industries. Ultimately, complex errors and top reject contributor of identified critical processes are corrected and the target or required process capability index is effectively achieved.


2005 ◽  
Vol 12 (9) ◽  
pp. 092102 ◽  
Author(s):  
H. Saitoh ◽  
Z. Yoshida ◽  
S. Watanabe
Keyword(s):  

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