Silicon diffusion in germanium described by connecting point defect parameters with bulk properties

2015 ◽  
Vol 2 (3) ◽  
pp. 036301 ◽  
Author(s):  
A Chroneos ◽  
R V Vovk
RSC Advances ◽  
2016 ◽  
Vol 6 (58) ◽  
pp. 53324-53330 ◽  
Author(s):  
V. Saltas ◽  
A. Chroneos ◽  
F. Vallianatos

GaAs diffusion is investigated with respect to temperature and pressure using a model that interconnects point defect with bulk properties.


2016 ◽  
Vol 3 (6) ◽  
pp. 065501 ◽  
Author(s):  
M W D Cooper ◽  
M E Fitzpatrick ◽  
L H Tsoukalas ◽  
A Chroneos

2015 ◽  
Vol 26 (11) ◽  
pp. 8421-8424 ◽  
Author(s):  
E. Ganniari-Papageorgiou ◽  
M. E. Fitzpatrick ◽  
A. Chroneos
Keyword(s):  

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