Surface structure of the C(0001)-(2×2)Cs system: Low-energy electron-diffraction dynamical calculation

1989 ◽  
Vol 39 (18) ◽  
pp. 13201-13205 ◽  
Author(s):  
Z. P. Hu ◽  
Jia Li ◽  
N. J. Wu ◽  
A. Ignatiev
1977 ◽  
Vol 38 (2) ◽  
pp. 387-395 ◽  
Author(s):  
B. J. Mrstik ◽  
R. Kaplan ◽  
T. L. Reinecke ◽  
M. Van Hove ◽  
S. Y. Tong

2006 ◽  
Vol 13 (06) ◽  
pp. 815-818 ◽  
Author(s):  
Y. LIU ◽  
J. WANG ◽  
M. H. XIE ◽  
H. S. WU

The surface structure of InN film heteroepitaxially grown on a GaN buffer layer by MBE is followed by low energy electron diffraction (LEED). The metallic surfactant layers on top of the InN surfaces show an incommensurate structure rather than being disordered. The metal in the incommensurate structure induces additional diffraction spots in the LEED. Based on the Auger experiments, not only In atoms but also Ga are present on the surface of the InN films.


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