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General theory of intraband relaxation processes in heavily doped graphene
Physical Review B
◽
10.1103/physrevb.91.205428
◽
2015
◽
Vol 91
(20)
◽
Cited By ~ 13
Author(s):
I. Kupčić
Keyword(s):
General Theory
◽
Relaxation Processes
◽
Intraband Relaxation
◽
Doped Graphene
◽
Heavily Doped
Download Full-text
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Intrinsic phonon anharmonicity in heavily doped graphene probed by Raman spectroscopy
Carbon
◽
10.1016/j.carbon.2021.09.017
◽
2021
◽
Author(s):
X. Chen
◽
M.-L. Lin
◽
X. Cong
◽
Y.-C. Leng
◽
X. Zhang
◽
...
Keyword(s):
Raman Spectroscopy
◽
Doped Graphene
◽
Heavily Doped
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Publisher's Note: Electronic structure of heavily doped graphene: The role of foreign atom states [Phys. Rev. B76, 161406 (2007)]
Physical Review B
◽
10.1103/physrevb.76.199901
◽
2007
◽
Vol 76
(19)
◽
Cited By ~ 7
Author(s):
Matteo Calandra
◽
Francesco Mauri
Keyword(s):
Electronic Structure
◽
Foreign Atom
◽
Doped Graphene
◽
Heavily Doped
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Renormalization of Dirac Cones by Correlation Effects in Heavily-Doped Graphene
Journal of the Korean Physical Society
◽
10.3938/jkps.76.44
◽
2020
◽
Vol 76
(1)
◽
pp. 44-48
Author(s):
Woo Jong Shin
◽
Yeongsup Sohn
◽
Sae Hee Ryu
◽
Minjae Huh
◽
Sung Won Jung
◽
...
Keyword(s):
Correlation Effects
◽
Doped Graphene
◽
Heavily Doped
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Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers
10.1117/12.467955
◽
2002
◽
Author(s):
Georgy G. Zegrya
◽
Natalya A. Gunko
◽
Eugen B. Dogonkin
Keyword(s):
Semiconductor Lasers
◽
Relaxation Processes
◽
Intraband Relaxation
◽
Current Characteristics
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Defects in thed+id-wave superconducting state in heavily doped graphene
Physical Review B
◽
10.1103/physrevb.90.224504
◽
2014
◽
Vol 90
(22)
◽
Cited By ~ 11
Author(s):
Tomas Löthman
◽
Annica M. Black-Schaffer
Keyword(s):
Superconducting State
◽
Doped Graphene
◽
Heavily Doped
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Inequivalent effect of Dirac valleys on low-energy plasmons in heavily doped graphene (Phys. Status Solidi B 6/2016)
physica status solidi (b)
◽
10.1002/pssb.201670538
◽
2016
◽
Vol 253
(6)
◽
pp. 1232-1232
Author(s):
S. Ta Ho
◽
H. Anh Le
◽
T. Le
◽
V. Nam Do
Keyword(s):
Low Energy
◽
Doped Graphene
◽
Heavily Doped
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Electronic structure of heavily doped graphene: The role of foreign atom states
Physical Review B
◽
10.1103/physrevb.76.161406
◽
2007
◽
Vol 76
(16)
◽
Cited By ~ 54
Author(s):
Matteo Calandra
◽
Francesco Mauri
Keyword(s):
Electronic Structure
◽
Foreign Atom
◽
Doped Graphene
◽
Heavily Doped
Download Full-text
Inequivalent effect of Dirac valleys on low-energy plasmons in heavily doped graphene
physica status solidi (b)
◽
10.1002/pssb.201552791
◽
2016
◽
Vol 253
(6)
◽
pp. 1186-1194
Author(s):
S. Ta Ho
◽
H. Anh Le
◽
T. Le
◽
V. Nam Do
Keyword(s):
Low Energy
◽
Doped Graphene
◽
Heavily Doped
Download Full-text
Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers
10.1117/12.514389
◽
2002
◽
Author(s):
Georgy G. Zegrya
◽
Irina A. Kostko
◽
Natalya A. Gunko
◽
Eugen B. Dogonkin
Keyword(s):
Quantum Well
◽
Quantum Well Lasers
◽
Relaxation Processes
◽
Intraband Relaxation
◽
Current Characteristics
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THE GENERAL THEORY OF RELAXATION PROCESSES FOR CONVEX FUNCTIONALS
Russian Mathematical Surveys
◽
10.1070/rm1970v025n01abeh001255
◽
1970
◽
Vol 25
(1)
◽
pp. 57-117
◽
Cited By ~ 9
Author(s):
Yu I Lyubich
◽
G D Maistrovskii
Keyword(s):
General Theory
◽
Relaxation Processes
◽
Convex Functionals
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