Влияние способа сильного легирования на композиционную однородность и оптические свойства монокристаллов LiNbO-=SUB=-3-=/SUB=- : Mg

Raman spectroscopy, laser conoscopy and photoinduced light scattering methods have been applied to comparatively study composition uniformity of strongly doped LiNbO3 crystals with a magnesium concentration close to a threshold value ≈5 mol% MgО, grown from a charge synthesized using precursor Nb2O5:Mg (homogeneous doping method) and at direct addition of magnesium to the melt (direct doping method). It has been shown that application of homogeneous doping method allows one to obtain compositionally more homogeneous heavily doped LiNbO3:Mg crystal than direct melt doping method.

Исследование сильно легированных эпитаксиальных пленок n-3C-SiC, выращенных методом сублимации на основе полуизолирующих подложек 6H-SiC

Heavily doped 3C-SiC films based on semi-insulating 6H-SiC substrates were obtained by sublimation epitaxy. The structural perfection of the obtained samples was monitored by X-ray diffractometry. The measurements of the photoluminescence and Hall effect spectra have confirmed the rather high perfection of the obtained epitaxial layers.

Терагерцевая генерация в эпитаксиальных пленках InAs

We present the results of terahertz generation studies under excitation via femtosecond lasers pulses epitaxial films of InAs, which were synthesized on semi-insulating and highly doped GaAs substrates. It is shown that a terahertz emitter based on epitaxial InAs film grown on a heavily doped GaAs n-type substrate, has the same terahertz generation efficiency as the InAs-film emitter grown on a semi-isolating GaAs substrate, but it has a significantly better spectral resolution, which is mainly determined by the parameters of the optical delay line and the femtosecond laser’s stability.

Прыжковая проводимость Мотта и Эфроса-Шкловского в пленках из наночастц Si, легированных фосфором и бором

The electrical characteristics of thin films formed from Si nanoparticles (nc-Si) with various degrees of doping are studied. To exclude the influence of ionic conductivity, the current parameters of the films were recorded in an ultrahigh vacuum (P ~ 3 – 5∙10–9 Torr) with preliminary high-temperature (9500C) annealing. An analysis of the temperature dependences of the conductivity showed that in nc-Si films formed from heavily doped nanoparticles (the concentration of free electrons ne is greater than 1019 cm-3), the transport is determined by variable-length hopping (VRH). In these samples, the Mott conductivity prevails at temperatures above 300C and at lower temperatures, the Efros-Shklovskii type variable range hopping conduction is dominate. In films with a medium level of doping of nanoparticles (ne <1019 cm-3), transport is realized by the Mott, Efros - Shklovskii and thermally activated conductivities. At the same time, thermally activated conductivity is dominated at temperatures above 560K. In nc-Si films formed from undoped nanoparticles, the transport parameters are determined by thermally activated conductivity and Mott's conductivity. Conductivity of Efros - Shklovskii is not observed in such films. From the analysis of the parameters corresponding to the Mott and Efros - Shklovsky conductivities, the localization lengths of wave functions, the density of states at the Fermi level (g (EF)), and average hopping lengths are found. The average hopping lengths in nc-Si films from nanoparticles pre-etched in HF are in the range 56 - 86 nm, which indicates that hopping in such films occurs via intermediate nanoparticles.

INFLUENCE OF THE METHOD OF DOPING ON UNIFORMITY AND OPTICAL PROPERTIES OF LiNbO:Mg CRYSTALS

Представлены результаты сравнительных комплексных исследований методами спектроскопии комбинационного рассеяния света и лазерной коноскопии композиционной однородности и некоторых оптических свойства близких по составу сильно легированных монодоменизированных кристаллов LiNbO: Mg (5,03 мол. % MgO и LiNbO: Mg (4,75 мол. % MgO), с концентрацией магния, близкой к пороговому значению ≈ 5 мол. % MgO, выращенных из шихты, синтезированной с использованием прекурсора NbO : Mg (метод гомогенного легирования), а также выращенных при непосредственном добавлении магния в расплав (метод прямого легирования). Показано, что методом гомогенного легирования с использованием прекурсора NbO : Mg можно получать отличающиеся низким коэрцитивным полем более композиционно однородные сильно легированные монокристаллы LiNbO : Mg, чем методом прямого легирования расплава магнием. При этом более однородное распределение легирующей добавки в кристаллах гомогенного легирования начинает формироваться уже на стадии синтеза прекурсора NbO : Mg и шихты ниобата лития при формировании химически активных комплексов, определяющих преимущественно кислородно-октаэдрическую структуру прекурсора NbO : Mg. The paper considers results for strongly doped turned to a single domain state crystals LiNbO: Mg (5,03 mol % MgO and LiNbO: Mg (4,75 mol % MgO). Magnesium concentration in these crystals is close to each other and to threshold ≈ 5 mol % MgO . Crystals were grown from a charge synthesized using precursor LiNbO: Mg (homogeneous doping method) and from a charge obtained at a direct addition of magnesium to the charge (direct doping method). Complex studies were carried out by Raman spectroscopy and laser conoscopy. Compositional homogeneity and some optical properties of studied crystals are considered. Homogeneous doping with precursor NbO: Mg method allows us to obtain heavily doped LiNbO: Mg single crystals with low coercive field and more compositionally homogeneous than method of direct melt doping with magnesium. In this case, a more uniform distribution of the dopant in homogeneously doped crystals begins to form at the stage of NbO: Mg precursor synthesis during the formation of chemically active complexes that predominantly determine the oxygen-octahedral structure of the NbO: Mg precursor.

Transport Properties of Rare Earth Nitrides

<p>In this thesis we investigate the transport properties of SmN, NdN and GdN, members of the rare earth nitride series of intrinsic ferromagnetic semiconductors. GdN is the central member of the series with seven occupied majority spin 4f states and seven empty minority spin 4f states. Both the filled and unfilled 4f states are some few eV away from the conduction and valence band extrema, resulting in transport properties which are dominated by the extended Gd 5d band. The half filled 4f shell, with zero net orbital angular momentum, furthermore simplifies calculations and as such GdN is the most studied both experimentally and in theory. As one moves to lighter members, the filled 4f states become unfilled states in the conduction band and the 4f shell now has a net orbital angular momentum. Calculations concerning these members are now significantly more complicated, and as such there exists a wide range of predictions concerning the conduction band minima in the lighter rare earth nitrides. To inform the current theoretical and experimental literature we report on three studies concerning the transport properties of SmN, NdN and GdN. To begin we report on the anomalous Hall effect in SmN, NdN and GdN. Under the symmetry of the rock-salt rare earth nitrides the magnitude of the anomalous Hall effect can imply the wave function of the conduction electron (i.e. d or f band). Measurements of the anomalous Hall effect in moderately doped samples are used to show the conduction channel in SmN and NdN is an f band or hybridised f/d band. Furthermore the sign of the anomalous Hall effect can be used to determine the orientation of the spin magnetic moment of the conduction electrons. Optical measurements of SmN, NdN and GdN films are then reported. Optical measurements provide a probe of the band structure of a material via direct transitions between the valence and conduction bands. Measurements of reflectivity and transmission on undoped SmN and NdN films were used to locate the unfilled majority spin 4f bands which form the conduction band minima in each material. Finally a preliminary study of heavily doped SmN, NdN and GdN is discussed. Structural measurements show a reduced lattice parameter while transport results find a significantly enhanced conductivity in heavily doped films. The Curie temperature is found to be enhanced and optical measurements show an increased absorption and red-shifted optical edge in doped films. The superconducting state of SmN is discussed and it is shown only to be present in moderately doped films, i.e. superconductivity is not present in undoped or degenerately doped SmN, within our measurement limits.</p>

Transport Properties of Rare Earth Nitrides

<p>In this thesis we investigate the transport properties of SmN, NdN and GdN, members of the rare earth nitride series of intrinsic ferromagnetic semiconductors. GdN is the central member of the series with seven occupied majority spin 4f states and seven empty minority spin 4f states. Both the filled and unfilled 4f states are some few eV away from the conduction and valence band extrema, resulting in transport properties which are dominated by the extended Gd 5d band. The half filled 4f shell, with zero net orbital angular momentum, furthermore simplifies calculations and as such GdN is the most studied both experimentally and in theory. As one moves to lighter members, the filled 4f states become unfilled states in the conduction band and the 4f shell now has a net orbital angular momentum. Calculations concerning these members are now significantly more complicated, and as such there exists a wide range of predictions concerning the conduction band minima in the lighter rare earth nitrides. To inform the current theoretical and experimental literature we report on three studies concerning the transport properties of SmN, NdN and GdN. To begin we report on the anomalous Hall effect in SmN, NdN and GdN. Under the symmetry of the rock-salt rare earth nitrides the magnitude of the anomalous Hall effect can imply the wave function of the conduction electron (i.e. d or f band). Measurements of the anomalous Hall effect in moderately doped samples are used to show the conduction channel in SmN and NdN is an f band or hybridised f/d band. Furthermore the sign of the anomalous Hall effect can be used to determine the orientation of the spin magnetic moment of the conduction electrons. Optical measurements of SmN, NdN and GdN films are then reported. Optical measurements provide a probe of the band structure of a material via direct transitions between the valence and conduction bands. Measurements of reflectivity and transmission on undoped SmN and NdN films were used to locate the unfilled majority spin 4f bands which form the conduction band minima in each material. Finally a preliminary study of heavily doped SmN, NdN and GdN is discussed. Structural measurements show a reduced lattice parameter while transport results find a significantly enhanced conductivity in heavily doped films. The Curie temperature is found to be enhanced and optical measurements show an increased absorption and red-shifted optical edge in doped films. The superconducting state of SmN is discussed and it is shown only to be present in moderately doped films, i.e. superconductivity is not present in undoped or degenerately doped SmN, within our measurement limits.</p>