Nitride Band-Structure Model in a Quantum Well Laser Simulator

2007 ◽  
Author(s):  
Anusha Venkatachalam ◽  
Paul. D. Yoder ◽  
Benjamin Klein ◽  
Aditya Kulkarni
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Structure Model ◽  
Quantum Well Laser ◽  
Band Structure Model

Nitride band-structure model in a quantum well laser simulator

2008 ◽  
Vol 40 (5-6) ◽  
pp. 295-299 ◽  
Author(s):  
Anusha Venkatachalam ◽  
P. D. Yoder ◽  
Benjamin Klein ◽  
Aditya Kulkarni
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Structure Model ◽  
Quantum Well Laser ◽  
Band Structure Model

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

scholarly journals Band structure model of modified Ge for optical device application

2018 ◽  
Vol 67 (19) ◽  
pp. 198502
Author(s):  
Yang Wen ◽  
Song Jian-Jun ◽  
Ren Yuan ◽  
Zhang He-Ming
Keyword(s):  
Band Structure ◽  
Structure Model ◽  
Optical Device ◽  
Device Application ◽  
Band Structure Model

Band structure model of Ge-C alloy films prepared from tetraethylgermanium in A R.F. discharge

1991 ◽  
Vol 137-138 ◽  
pp. 875-878 ◽  
Author(s):  
Jacek Tyczkowski ◽  
Ewa Odrobina ◽  
Maciej Gazicki ◽  
Fethi Olcaytug
Keyword(s):  
Band Structure ◽  
Structure Model ◽  
Alloy Films ◽  
Band Structure Model
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