W-Band Power Combiner Design

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.1980.1130068 ◽

1980 ◽

Vol 28 (4) ◽

pp. 295-305 ◽

Author(s):

Kai Chang ◽

R.L. Ebert

Keyword(s):

Power Combiner ◽

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A High-Efficiency W-Band Power Combiner Based on the T₀₁ Mode in a Circular Waveguide

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2021.3135410 ◽

2021 ◽

pp. 1-1

Author(s):

Zhang Dang ◽

Hai-Fan Zhu ◽

Jian Huang ◽

Hua-Li Zhu ◽

Yong Zhang

Keyword(s):

High Efficiency ◽

Circular Waveguide ◽

Power Combiner ◽

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A W-band quasi-optical power combiner based on waveguide lens

2009 International Conference on Wireless Communications & Signal Processing ◽

10.1109/wcsp.2009.5371402 ◽

2009 ◽

Author(s):

Mingyong Chen ◽

Wenbin Dou

Keyword(s):

Optical Power ◽

Power Combiner ◽

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A +27 dBm Psat 27 dB Gain W-Band Power Amplifier in $0.1 \ \mu \mathrm{m}$ GaAs

2018 IEEE/MTT-S International Microwave Symposium - IMS ◽

10.1109/mwsym.2018.8439854 ◽

2018 ◽

Author(s):

Aviv Barabi ◽

Noam Ross ◽

Amity Wolfman ◽

Ofer Shaham ◽

Eran Socher

Keyword(s):

Power Amplifier ◽

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24.8 A W-Band Power Amplifier with Distributed Common-Source GaN HEMT and 4-Way Wilkinson-Lange Combiner Achieving 6W Output Power and 18% PAE at 95GHz

2020 IEEE International Solid- State Circuits Conference - (ISSCC) ◽

10.1109/isscc19947.2020.9063161 ◽

2020 ◽

Author(s):

Weibo Wang ◽

Fangjin Guo ◽

Tangsheng Chen ◽

Keping Wang

Keyword(s):

Output Power ◽

Power Amplifier ◽

Common Source ◽

Gan Hemt ◽

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W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

IEEE Electron Device Letters ◽

10.1109/led.2020.2967034 ◽

2020 ◽

Vol 41 (3) ◽

pp. 349-352 ◽

Author(s):

Brian Romanczyk ◽

Xun Zheng ◽

Matthew Guidry ◽

Haoran Li ◽

Nirupam Hatui ◽

...

Keyword(s):

Power Performance ◽

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High-Breakdown, High- $f_{\mathrm{ max}}$ Multiport Stacked-Transistor Topologies for the ${W}$ -Band Power Amplifiers

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.2016.2641464 ◽

2017 ◽

Vol 52 (5) ◽

pp. 1305-1319 ◽

Author(s):

Kunal Datta ◽

Hossein Hashemi

Keyword(s):

Power Amplifiers ◽

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N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density

IEEE Electron Device Letters ◽

10.1109/led.2020.3022401 ◽

2020 ◽

Vol 41 (11) ◽

pp. 1633-1636

Author(s):

Brian Romanczyk ◽

Weiyi Li ◽

Matthew Guidry ◽

Nirupam Hatui ◽

Athith Krishna ◽

...

Keyword(s):

Power Density ◽

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A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2013.6659206 ◽

2013 ◽

Author(s):

Po-Yi Wu ◽

James F. Buckwalter

Keyword(s):

Power Amplifier ◽

Dual Band ◽

W Band ◽

Sige Bicmos ◽

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W band power amplifier based on 1 µm InP DHBT

2014 IEEE International Conference on Communiction Problem-solving ◽

10.1109/iccps.2014.7062247 ◽

2014 ◽

Author(s):

Oupeng Li ◽

Wei Cheng ◽

Lei Wang ◽

Haiyan Lu ◽

Ruimin Xu

Keyword(s):

Power Amplifier ◽

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Spatially power-combined W-band power amplifier using stacked CMOS

2014 IEEE Radio Frequency Integrated Circuits Symposium ◽

10.1109/rfic.2014.6851683 ◽

2014 ◽

Author(s):

Jefy Jayamon ◽

Ozan Gurbuz ◽

Bassel Hanafi ◽

Amir Agah ◽

James Buckwalter ◽

...

Keyword(s):

Power Amplifier ◽

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