THE DEVELOPMENT OF PERPENDICULAR MAGNETIC TUNNELING JUNCTIONS
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This paper reviews the progress made over the last few years in understanding the development of perpendicular magnetic tunneling junctions (pMTJs). The material systems for making pMTJs, including rare-earth/transition metal alloys, L10-ordered (Co, Fe)–Pt alloys, Co/(Pd, Pt) multilayers, and CoFeB–MgO crystallized structures, are briefly introduced. The fabrication processes of the MTJ devices are focused on, consisting of open-trench, etch-back and self-aligned techniques. The authors also propose a spin-torque nano-oscillator based on pMTJ, for application in GHz range telecommunications.
2012 ◽
Vol 12
(9)
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pp. 7550-7553
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1978 ◽
Vol 7
(1-4)
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pp. 124-126
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