(Invited) Some Recent Progress in Ferroelectric Memory Technology

To realize intelligent functions in electronic devices like a human brain, it is important to develop the electronic devices that can imitate biological neurons and synapses (synaptic electronics). In this paper, we review the critical learning mechanisms for synaptic plasticity. Different electronic devices were developed to mimic biological synapses, such as atomic switch, phase change memory, ferroelectric memory, and electric-double-layer transistors. More importantly, several groups have realized the artificial neuromorphic network using multi-gate transistor architecture. The leap from synapse to neuron to neural network, thus, has been systematically realized using thin films and nanomaterials. The emerging synaptic electronics can have a broader applications and brighter future in the next-generation intelligent nano-electronics.

Download Full-text

Electron-Mirror Microscopic Aspects of Ferroelectric Domains of BaTiO3 And Ca2Sr (C2H5CO2)6

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069387 ◽

1970 ◽

Vol 28 ◽

pp. 478-479

Author(s):

Teruo Someya ◽

Jinzo Kobayashi

Keyword(s):

Surface Layer ◽

Electric Fields ◽

Quantitative Study ◽

Recent Progress ◽

Ferroelectric Domain ◽

Resolving Power ◽

Surface Pattern ◽

Crystal Surfaces ◽

One Dimensional ◽

Ferroelectric Domains

Recent progress in the electron-mirror microscopy (EMM), e.g., an improvement of its resolving power together with an increase of the magnification makes it useful for investigating the ferroelectric domain physics. English has recently observed the domain texture in the surface layer of BaTiO3. The present authors ) have developed a theory by which one can evaluate small one-dimensional electric fields and/or topographic step heights in the crystal surfaces from their EMM pictures. This theory was applied to a quantitative study of the surface pattern of BaTiO3).

Download Full-text

The Nature of Oxide Surfaces: Topographic and Electronic Structure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100150666 ◽

1993 ◽

Vol 51 ◽

pp. 966-967

Author(s):

Dawn A. Bonnell ◽

Yong Liang

Keyword(s):

Transition Metal Oxides ◽

Electronic Structures ◽

Recent Progress ◽

Spatial Localization ◽

Level Of Detail ◽

Scanning Tunneling ◽

Oxide Surfaces ◽

Tunneling Microscopy ◽

Considerable Effort ◽

Complete Understanding

Recent progress in the application of scanning tunneling microscopy (STM) and tunneling spectroscopy (STS) to oxide surfaces has allowed issues of image formation mechanism and spatial resolution limitations to be addressed. As the STM analyses of oxide surfaces continues, it is becoming clear that the geometric and electronic structures of these surfaces are intrinsically complex. Since STM requires conductivity, the oxides in question are transition metal oxides that accommodate aliovalent dopants or nonstoichiometry to produce mobile carriers. To date, considerable effort has been directed toward probing the structures and reactivities of ZnO polar and nonpolar surfaces, TiO2 (110) and (001) surfaces and the SrTiO3 (001) surface, with a view towards integrating these results with the vast amount of previous surface analysis (LEED and photoemission) to build a more complete understanding of these surfaces. However, the spatial localization of the STM/STS provides a level of detail that leads to conclusions somewhat different from those made earlier.

Download Full-text