Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
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1994 ◽
Vol 30
(2)
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pp. 399-407
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2012 ◽
Vol 51
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pp. 10ND10
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2000 ◽
Vol 12
(2)
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pp. 134-136
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Effect of the barrier thickness on the performance of multiple-quantum-well InGaN photovoltaic cells
2015 ◽
Vol 54
(7)
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pp. 072302
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