Laser Annealing of Te-Implanted III-V Semiconductors Studied by Mossbauer Spectroscopy

1980 ◽  
Vol 3 ◽  
Author(s):  
M. Van Rossum ◽  
I. Dezsi ◽  
G. Langouche ◽  
J. De Bruyn ◽  
R. Coussement
Keyword(s):  
Mössbauer Spectroscopy ◽  
Laser Annealing ◽  
Mossbauer Spectroscopy ◽  
Quadrupole Split ◽  
Annealing Behaviour ◽  
Mößbauer Spectroscopy ◽  
Annealing Procedure

ABSTRACTThe laser annealing behaviour of Te-implanted GaAs, GaSb, GaP and InP has been studied by Mössbauer Spectroscopy. The spectra of the as-implanted samples are characterized by a quadrupole split multiplet, showing that the Te ions come to rest at non-substitutional lattice sites. The laser annealing is shown to shift the implanted impurities towards substitutional positions. The efficiency of the laser annealing procedure is very similar for all lattices under study.

ELECTRON SPECTROMETER FOR MÖSSBAUER SPECTROSCOPY

1979 ◽  
Vol 40 (C2) ◽  
pp. C2-14-C2-16
Author(s):  
T. Toriyama ◽  
K. Saneyoshi ◽  
K. Hisatake
Keyword(s):  
Mössbauer Spectroscopy ◽  
Mossbauer Spectroscopy ◽  
Electron Spectrometer ◽  
Mößbauer Spectroscopy

MÖSSBAUER SPECTROSCOPY OF KRYPTON COMPOUNDS

1976 ◽  
Vol 37 (C6) ◽  
pp. C6-534-C6-534
Author(s):  
J. H. HOLLOWAY ◽  
G. J. SCHROBILGEN ◽  
S. BUKSHPAN ◽  
W. HILBRANTS ◽  
H. DE WAARD
Keyword(s):  
Mössbauer Spectroscopy ◽  
Mossbauer Spectroscopy ◽  
Mößbauer Spectroscopy

STUDY BY MÖSSBAUER SPECTROSCOPY OF NEW SPINEL COMPOUNDS CONTAINING Fe3+AND Sb5+IONS

1979 ◽  
Vol 40 (C2) ◽  
pp. C2-339-C2-341 ◽  
Author(s):  
A. Gérard ◽  
F. Grandjean ◽  
J. Preudhomme ◽  
P. Tarte
Keyword(s):  
Mössbauer Spectroscopy ◽  
Mossbauer Spectroscopy ◽  
Mößbauer Spectroscopy ◽  
Spinel Compounds
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