kondo semiconductor
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Possible antiferroquadrupolar order in the Kondo semiconductor CeOs4Sb12

2021 ◽  
Vol 104 (19) ◽  
Author(s):  
Takashi Tayama ◽  
Yusuke Kani ◽  
Momota Imai ◽  
Yuta Kanai ◽  
Hitoshi Sugawara
Keyword(s):  
Kondo Semiconductor

scholarly journals Crossover from Kondo semiconductor to metallic antiferromagnet with 5d -electron doping in CeFe2Al10

2021 ◽  
Vol 104 (14) ◽  
Author(s):  
Rajesh Tripathi ◽  
D. T. Adroja ◽  
M. R. Lees ◽  
A. Sundaresan ◽  
S. Langridge ◽  
...  
Keyword(s):  
Electron Doping ◽  
Kondo Semiconductor

Pressure studies on the antiferromagnetic Kondo semiconductor Ce( Ru1−xRhx ) 2Al10 ( x=0,0.1 )

2017 ◽  
Vol 96 (23) ◽  
Author(s):  
Hiroshi Tanida ◽  
Kentaro Kitagawa ◽  
Naoyuki Tateiwa ◽  
Masafumi Sera ◽  
Takashi Nishioka
Keyword(s):  
Kondo Semiconductor

scholarly journals Uniaxial pressure effects on the unusual antiferromagnetic transition in the Kondo semiconductor CeOs2Al10

2017 ◽  
Vol 807 (2) ◽  
pp. 022002 ◽  
Author(s):  
Kyosuke Hayashi ◽  
Kazunori Umeo ◽  
Yoshihiro Yamada ◽  
Jo Kawabata ◽  
Yuji Muro ◽  
...  
Keyword(s):  
Pressure Effects ◽  
Uniaxial Pressure ◽  
Antiferromagnetic Transition ◽  
Kondo Semiconductor

scholarly journals Dilution effects on the antiferromagnetic Kondo semiconductor CeOs2Al10

2017 ◽  
Vol 807 ◽  
pp. 022003 ◽  
Author(s):  
Y Okada ◽  
J Kawabata ◽  
Y Yamada ◽  
Y Muro ◽  
T Takabatake
Keyword(s):  
Kondo Semiconductor ◽  
Dilution Effects

scholarly journals Interplay between hybridization gaps and antiferromagnetic gap in the hole-doped Kondo semiconductor Ce(Os1-yRey)2Al10

2017 ◽  
Vol 807 ◽  
pp. 012008
Author(s):  
Jo Kawabata ◽  
Toshikazu Ekino ◽  
Yoshihiro Yamada ◽  
Akira Sugimoto ◽  
Yuji Muro ◽  
...  
Keyword(s):  
Kondo Semiconductor

scholarly journals Thermal conductivity of the Kondo semiconductor CeRu4Sn6

2017 ◽  
Vol 807 ◽  
pp. 012013
Author(s):  
J Hänel ◽  
M Taupin ◽  
M Ikeda ◽  
V Martelli ◽  
P Tomeš ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Kondo Semiconductor

Fe Substitution Effect on the High-Field Magnetization in the Kondo Semiconductor CeRu2Al10

2017 ◽  
Vol 86 (2) ◽  
pp. 023705 ◽  
Author(s):  
Akihiro Kondo ◽  
Koichi Kindo ◽  
Hiroki Nohara ◽  
Michio Nakamura ◽  
Hiroshi Tanida ◽  
...  
Keyword(s):  
High Field ◽  
Substitution Effect ◽  
Field Magnetization ◽  
High Field Magnetization ◽  
Kondo Semiconductor ◽  
Fe Substitution

scholarly journals Amorphization Effect for Kondo Semiconductor CeRu2Al10

2017 ◽  
Vol 2017 ◽  
pp. 1-5 ◽  
Author(s):  
Yusuke Amakai ◽  
Yasuhiro Shiojiri ◽  
Kei Ishihara ◽  
Hiroto Hitotsukabuto ◽  
Shigeyuki Murayama ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Resistivity ◽  
Temperature Region ◽  
Kondo Effect ◽  
Magnetic Transition ◽  
High Temperature Region ◽  
Small Temperature ◽  
Paramagnetic Behavior ◽  
Kondo Semiconductor ◽  
Disordered Alloy

We measured the magnetic susceptibility χ, electrical resistivity ρ, and specific heat Cp of a sputtered amorphous (a-)CeRu2Al10 alloy. χ value for a-CeRu2Al10 alloy follows a Curie-Weiss paramagnetic behavior in the high-temperature region, and magnetic transition was not observed down to 2 K. The effective paramagnetic moment peff is 1.19 μB/Ce-atom. The resistivity shows a typical disordered alloy behavior, that is, small temperature dependence for the whole temperature range. We observed an enhancement of ρ and Cp/T in the low-temperature region of T<10 K. The enhancement in ρ is suppressed by applying a magnetic field. It is suggested that this behavior is caused by the Kondo effect.

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