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1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
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TOTAL DOCUMENTS
53
(FIVE YEARS 0)
H-INDEX
10
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Published By IEEE
1878303694
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An Analysis Of The Fields On The Horizontal Coupling Plane In Esd Testing
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634231
◽
1997
◽
Cited By ~ 3
Author(s):
S. Frei
◽
D. Pommerenke
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Grounding Personnel Via The Floor/footwear System
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634240
◽
1997
◽
Cited By ~ 5
Author(s):
R. Gaertner
◽
K.-H. Helling
◽
G. Biermann
◽
E. Brazda
◽
R. Haberhauer
◽
...
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Analysis Of Esd Glove Use
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634227
◽
1997
◽
Cited By ~ 1
Author(s):
G. Baumgartner
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Why The Human Body Capacitance Is So Large
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634236
◽
1997
◽
Cited By ~ 2
Author(s):
Jiusheng Huang
◽
ZhanCheng Wu
◽
Shanghe Liu
Keyword(s):
Human Body
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Characterization Of Esd Damaged Magnetoresistive Recording Heads
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634267
◽
1997
◽
Author(s):
Chung F. Lam
◽
E. Salhi
◽
S. Chim
Keyword(s):
Recording Heads
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About The Different Methods Of Observing Esd
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634233
◽
1997
◽
Cited By ~ 1
Author(s):
S. Frei
◽
D. Pomrnerenke
Download Full-text
Gate Burnout Of Small Signal Modfet's At Tlp Stress
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634221
◽
1997
◽
Cited By ~ 1
Author(s):
V.A. Vashchenko
◽
J.B. Martynov
◽
V.F. Sinkevitch
Keyword(s):
Small Signal
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Esd Program Auditing: The Auditor's Perspective
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634242
◽
1997
◽
Author(s):
T.L. Theis
◽
W.Y. McFarland
◽
R.A. Brin
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Influence Of Well Profile And Gate Length On The ESD Performance Of A Fully Silicided 0.25/spl mu/m Cmos Technology
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634258
◽
1997
◽
Cited By ~ 3
Author(s):
K. Bock
◽
C. Russ
◽
G. Badenes
◽
G. Groeseneken
◽
L. Deferm
Keyword(s):
Cmos Technology
◽
Gate Length
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Field-induced Breakdown Esd Damage Of Magnetoresistive Recording Heads
1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium
◽
10.1109/eosesd.1997.634266
◽
1997
◽
Cited By ~ 17
Author(s):
A. Wallash
◽
M. Honda
Keyword(s):
Recording Heads
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