Proceedings of Semiconducting and Semi-Insulating Materials Conference
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780331796

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Structural properties and electron states of amorphous diamond-like carbon

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.571093 ◽

2002 ◽

Author(s):

C. Jun ◽

J.K.O. Sin ◽

W. Kelin

Keyword(s):

Structural Properties ◽

Diamond Like Carbon ◽

Electron States

Download Full-text

Temperature dependence of the radiative recombination in GaN

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.570887 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.P. Bergman ◽

B. Monemar ◽

H. Amano ◽

I. Akasaki

Keyword(s):

Temperature Dependence ◽

Radiative Recombination

Download Full-text

Characterization of conduction in LTG-GaAs

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.570870 ◽

2002 ◽

Cited By ~ 1

Author(s):

J.C. Bourgoin ◽

K. Khirouni ◽

J. Nagle

Download Full-text

Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.571096 ◽

2002 ◽

Author(s):

A.A. Gutkin ◽

M.A. Reshchikov ◽

V.E. Sedov ◽

V.R. Sosnovskii

Keyword(s):

Uniaxial Pressure ◽

Low Symmetry

Download Full-text

Noise performance of Si/Si/sub 1-x/Ge/sub x/ n-channel HEMTs and p-channel FETs

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.571084 ◽

2002 ◽

Author(s):

Kuo-Wei Liu ◽

A.F.M. Anwar

Keyword(s):

Noise Performance

Download Full-text

Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.571103 ◽

2002 ◽

Author(s):

M.A. Reshchikov ◽

A.A. Gutkin ◽

V.E. Sedov

Download Full-text

Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.570865 ◽

2002 ◽

Cited By ~ 1

Author(s):

R. Fornari ◽

A. Zappettini ◽

E. Gombia ◽

R. Mosca ◽

M. Curti

Download Full-text

Conductance properties of as-grown and annealed MBE GaAs layers grown at temperatures between 200 and 420°C

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.570872 ◽

2002 ◽

Cited By ~ 4

Author(s):

P. Kordos ◽

J. Betko ◽

M. Morvic ◽

J. Novak ◽

A. Forster

Download Full-text

Control of stoichiometry dependent defects in low temperature GaAs

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.570869 ◽

2002 ◽

Cited By ~ 2

Author(s):

M. Luysberg ◽

H. Sohn ◽

A. Prasad ◽

H. Fujioka ◽

R. Klockenbrink ◽

...

Keyword(s):

Low Temperature ◽

Low Temperature Gaas

Download Full-text

An electrical and Raman spectroscopic study of a-GaAs/sub 1-x/N/sub x//Si heterostructures

Proceedings of Semiconducting and Semi-Insulating Materials Conference ◽

10.1109/sim.1996.570907 ◽

2002 ◽

Author(s):

K. Aguir ◽

J. Bandet ◽

D. Lollman ◽

B. Roumiguieres ◽

H. Carchano

Keyword(s):

Spectroscopic Study ◽

Raman Spectroscopic ◽

Raman Spectroscopic Study

Download Full-text

Proceedings of Semiconducting and Semi-Insulating Materials ConferenceLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Structural properties and electron states of amorphous diamond-like carbon

Temperature dependence of the radiative recombination in GaN

Characterization of conduction in LTG-GaAs

Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure

Noise performance of Si/Si/sub 1-x/Ge/sub x/ n-channel HEMTs and p-channel FETs

Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs

Annealing-related conductivity conversion in lightly Fe-doped n-type InP wafers

Conductance properties of as-grown and annealed MBE GaAs layers grown at temperatures between 200 and 420°C

Control of stoichiometry dependent defects in low temperature GaAs

An electrical and Raman spectroscopic study of a-GaAs/sub 1-x/N/sub x//Si heterostructures

Proceedings of Semiconducting and Semi-Insulating Materials Conference
Latest Publications