Optimum design of highly linear and efficient GaN HEMT Doherty amplifier considering the soft turn-on effects

Microwave and Optical Technology Letters ◽

10.1002/mop.24210 ◽

2009 ◽

Vol 51 (4) ◽

pp. 956-959 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Optimum Design ◽

Turn On ◽

Gan Hemt ◽

Doherty Amplifier

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Linearity-optimized power tracking GaN HEMT Doherty amplifier using derivative superposition technique for repeater systems

2008 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2008.4633194 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Gan Hemt ◽

Superposition Technique ◽

Doherty Amplifier ◽

Derivative Superposition

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Linearity-optimized class-E GaN HEMT Doherty amplifier

2008 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2008.4957912 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Gan Hemt ◽

Doherty Amplifier ◽

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A GaN HEMT Doherty amplifier with a series connected load

2009 Asia Pacific Microwave Conference ◽

10.1109/apmc.2009.5385313 ◽

2009 ◽

Author(s):

Satoshi Kawai ◽

Yoichiro Takayama ◽

Ryo Ishikawa ◽

Kazuhiko Honjo

Keyword(s):

Gan Hemt ◽

Doherty Amplifier

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High-efficiency doherty amplifier using GaN HEMT class-F cells for WCDMA applications

2008 International Conference on Microwave and Millimeter Wave Technology ◽

10.1109/icmmt.2008.4540359 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo ◽

Yoon-Ha Jeong

Keyword(s):

High Efficiency ◽

Gan Hemt ◽

F Cells ◽

Doherty Amplifier ◽

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A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station

2007 IEEE/MTT-S International Microwave Symposium ◽

10.1109/mwsym.2007.380421 ◽

2007 ◽

Author(s):

Norihiko Ui ◽

Hiroaki Sano ◽

Seigo Sano

Keyword(s):

Base Station ◽

Gan Hemt ◽

Doherty Amplifier

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Low 0.3 V Turn-on of Gated-Anode GaN-Cap/AlGaN/GaN HEMT Diode with Selective Dry-Etching Technique

2019 Compound Semiconductor Week (CSW) ◽

10.1109/iciprm.2019.8819033 ◽

2019 ◽

Author(s):

Jumpei Sumino ◽

Momoe Shojima ◽

Ryohei Yamaguchi ◽

Yamato Osada ◽

Kamimura Ryuichiro ◽

...

Keyword(s):

Dry Etching ◽

Etching Technique ◽

Turn On ◽

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High-Efficiency Class-E-Cells-Based GaN HEMT Doherty Amplifier for WCDMA Applications

2008 38th European Microwave Conference ◽

10.1109/eumc.2008.4751480 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

High Efficiency ◽

Gan Hemt ◽

Doherty Amplifier ◽

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GaN HEMT based Doherty amplifier for 3.5-GHz WiMAX Applications

2007 European Microwave Integrated Circuit Conference ◽

10.1109/emicc.2007.4412732 ◽

2007 ◽

Author(s):

Junghwan Moon ◽

Jangheon Kim ◽

Ildu Kim ◽

Young Yun Woo ◽

Sungchul Hong ◽

...

Keyword(s):

Gan Hemt ◽

Doherty Amplifier

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An analysis of false turn-on phenomenon of GaN HEMT with parasitic components

2017 IEEE International Telecommunications Energy Conference (INTELEC) ◽

10.1109/intlec.2017.8214160 ◽

2017 ◽

Author(s):

Toshihiro Iwaki ◽

Seiya Ishiwaki ◽

Takashi Sawada ◽

Masayoshi Yamamoto

Keyword(s):

Turn On ◽

Gan Hemt ◽

Parasitic Components

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Advanced design of an extended GaN HEMT Doherty amplifier using uneven saturation power for WiMAX applications

2009 IEEE Radio and Wireless Symposium ◽

10.1109/rws.2009.4957385 ◽

2009 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Gan Hemt ◽

Saturation Power ◽

Doherty Amplifier

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