A 80W 2-stage GaN HEMT Doherty Amplifier with 50dBc ACLR, 42% Efficiency 32dB Gain with DPD for W-CDMA Base station

2007 IEEE/MTT-S International Microwave Symposium ◽

10.1109/mwsym.2007.380421 ◽

2007 ◽

Author(s):

Norihiko Ui ◽

Hiroaki Sano ◽

Seigo Sano

Keyword(s):

Base Station ◽

Gan Hemt ◽

Doherty Amplifier

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Linearity-optimized power tracking GaN HEMT Doherty amplifier using derivative superposition technique for repeater systems

2008 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2008.4633194 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Gan Hemt ◽

Superposition Technique ◽

Doherty Amplifier ◽

Derivative Superposition

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High-Power High-Efficiency GaN HEMT Doherty Amplifiers for Base Station Applications

IEICE Transactions on Electronics ◽

10.1587/transele.2021mmi0003 ◽

2021 ◽

Author(s):

Andrei GREBENNIKOV ◽

James WONG ◽

Hiroaki DEGUCHI

Keyword(s):

High Efficiency ◽

Base Station ◽

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35 W bi-level supply modulated Doherty amplifier for 3G LTE base station

2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications ◽

10.1109/pawr.2012.6174927 ◽

2012 ◽

Author(s):

Joon Hyung Kim ◽

Jae Ho Jung ◽

Chul Soon Park

Keyword(s):

Base Station ◽

Doherty Amplifier

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A 45% Drain Efficiency, -50dBc ACLR GaN HEMT Class-E Amplifier with DPD for W-CDMA Base Station

2006 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2006.249734 ◽

2006 ◽

Author(s):

Norihiko Ui ◽

Seigo Sano

Keyword(s):

Base Station ◽

Gan Hemt ◽

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Linearity-optimized class-E GaN HEMT Doherty amplifier

2008 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2008.4957912 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

Gan Hemt ◽

Doherty Amplifier ◽

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A 750-W High Efficiency LDMOS New Four-way Doherty Amplifier for Base-Station Applications

2019 IEEE MTT-S International Microwave Symposium (IMS) ◽

10.1109/mwsym.2019.8700811 ◽

2019 ◽

Author(s):

Xiaochuan Jiang ◽

Tao Zhang ◽

Jingchu He ◽

Steve Loysel ◽

Binghui Zhang ◽

...

Keyword(s):

High Efficiency ◽

Base Station ◽

Doherty Amplifier

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A GaN HEMT Doherty amplifier with a series connected load

2009 Asia Pacific Microwave Conference ◽

10.1109/apmc.2009.5385313 ◽

2009 ◽

Author(s):

Satoshi Kawai ◽

Yoichiro Takayama ◽

Ryo Ishikawa ◽

Kazuhiko Honjo

Keyword(s):

Gan Hemt ◽

Doherty Amplifier

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High-efficiency doherty amplifier using GaN HEMT class-F cells for WCDMA applications

2008 International Conference on Microwave and Millimeter Wave Technology ◽

10.1109/icmmt.2008.4540359 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo ◽

Yoon-Ha Jeong

Keyword(s):

High Efficiency ◽

Gan Hemt ◽

F Cells ◽

Doherty Amplifier ◽

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A Doherty amplifier for TD-SCDMA base station applications based on a single packaged dual-path integrated LDMOS power transistor

2010 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.2010.5514763 ◽

2010 ◽

Author(s):

G. Wang ◽

L. Zhao ◽

M. Szymanowski

Keyword(s):

Base Station ◽

Power Transistor ◽

Doherty Amplifier

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Advanced design methods of Doherty amplifier for wide bandwidth, high efficiency base station power amplifiers

2005 European Microwave Conference ◽

10.1109/eumc.2005.1610088 ◽

2005 ◽

Author(s):

Jangheon Kim ◽

Jeonghyeon Cha ◽

Ildu Kim ◽

Sang Yeon Noh ◽

Cheon Seok Park ◽

...

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

Base Station ◽

Design Methods ◽

Wide Bandwidth ◽

Doherty Amplifier

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