High-efficiency doherty amplifier using GaN HEMT class-F cells for WCDMA applications

2008 International Conference on Microwave and Millimeter Wave Technology ◽

10.1109/icmmt.2008.4540359 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo ◽

Yoon-Ha Jeong

Keyword(s):

High Efficiency ◽

Gan Hemt ◽

F Cells ◽

Doherty Amplifier ◽

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A High-Efficiency Class F MMIC Power Amplifier at 4.0 GHz Using AlGaN/GaN HEMT Technology

2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2012.6340065 ◽

2012 ◽

Author(s):

Valiallah Zomorrodian ◽

Umesh K. Mishra ◽

Robert A. York

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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A Dual-Band High Efficiency Class-F GaN HEMT Power Amplifier for Wireless Communication

IETE Journal of Research ◽

10.1080/03772063.2019.1619486 ◽

2019 ◽

pp. 1-8

Author(s):

Sh. Rezaei Borjlu ◽

M. S. Khadem

Keyword(s):

Wireless Communication ◽

Power Amplifier ◽

High Efficiency ◽

Dual Band ◽

Gan Hemt ◽

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High efficiency GaN HEMT class-F synchronous rectifier for wireless applications

IEICE Electronics Express ◽

10.1587/elex.11.20140952 ◽

2015 ◽

Vol 12 (1) ◽

pp. 20140952-20140952 ◽

Author(s):

Sadegh Abbasian ◽

Thomas Johnson

Keyword(s):

High Efficiency ◽

Wireless Applications ◽

Gan Hemt ◽

Synchronous Rectifier ◽

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GaN HEMT based class-F power amplifier with broad bandwidth and high efficiency

2016 International Conference on Integrated Circuits and Microsystems (ICICM) ◽

10.1109/icam.2016.7813578 ◽

2016 ◽

Author(s):

Mustazar Iqbal ◽

Anna Piacibello

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Broad Bandwidth ◽

Gan Hemt ◽

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High-Efficiency Class-E-Cells-Based GaN HEMT Doherty Amplifier for WCDMA Applications

2008 38th European Microwave Conference ◽

10.1109/eumc.2008.4751480 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

High Efficiency ◽

Gan Hemt ◽

Doherty Amplifier ◽

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High-Efficiency GaN-HEMT Class-F Amplifier Operating at 5.7 GHz

2008 38th European Microwave Conference ◽

10.1109/eumc.2008.4751483 ◽

2008 ◽

Author(s):

Kenta Kuroda ◽

Ryo Ishikawa ◽

Kazuhiko Honjo

Keyword(s):

High Efficiency ◽

Gan Hemt ◽

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Design of high efficiency GaN HEMT class-F power amplifier at S-band

Proceedings of 2014 3rd Asia-Pacific Conference on Antennas and Propagation ◽

10.1109/apcap.2014.6992717 ◽

2014 ◽

Author(s):

Ying Wang ◽

Shiwei Dong ◽

Lisheng Yang ◽

Zhengjun Li ◽

Yazhou Dong ◽

...

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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High-Efficiency Class-F GaN HEMT Amplifier With Simple Parasitic-Compensation Circuit

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2007.912023 ◽

2008 ◽

Vol 18 (1) ◽

pp. 55-57 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

High Efficiency ◽

Compensation Circuit ◽

Gan Hemt ◽

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High Efficiency GaN HEMT Class F Power Amplifier for S-band Telemetry Application

2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) ◽

10.1109/piers-fall48861.2019.9021289 ◽

2019 ◽

Author(s):

Hamid Raza Dhanyal ◽

Weidong Hu ◽

Ali Ahmed ◽

Hamza Nawaz ◽

M. Waseem

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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A high-efficiency class-F GaN HEMT power amplifier with a diode predistortion linearizer

2008 Asia-Pacific Microwave Conference ◽

10.1109/apmc.2008.4958054 ◽

2008 ◽

Author(s):

A. Ando ◽

Y. Takayama ◽

T. Yoshida ◽

R. Ishikawa ◽

K. Honjo

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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