Effects of strain-control layers on piezoelectric field and indium incorporation in InGaN/GaN blue quantum wells

2010 ◽  
Vol 4 (8-9) ◽  
pp. 221-223 ◽  
Author(s):  
Jae-Ho Song ◽  
Yanqun Dong ◽  
Ho-Jong Kim ◽  
Byung-Jun Ahn ◽  
Tae-Soo Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Control ◽  
Piezoelectric Field

Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells

2016 ◽  
Vol 108 (8) ◽  
pp. 082103 ◽  
Author(s):  
S. Azaizia ◽  
A. Balocchi ◽  
H. Carrère ◽  
P. Renucci ◽  
T. Amand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spin Relaxation ◽  
Electron Spin ◽  
Electron Spin Relaxation ◽  
Piezoelectric Field

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

Strain control of InGaAs/AlAs/AlAsSb quantum wells by interface termination method between AlAs and AlAsSb

2011 ◽  
Vol 323 (1) ◽  
pp. 39-41 ◽  
Author(s):  
Shin-ichiro Gozu ◽  
Teruo Mozume ◽  
Hiroshi Ishikawa
Keyword(s):  
Quantum Wells ◽  
Strain Control

Magnitude of the piezoelectric field in (111)B InyGa1−yAs strained‐layer quantum wells

1993 ◽  
Vol 74 (7) ◽  
pp. 4681-4684 ◽  
Author(s):  
T. S. Moise ◽  
L. J. Guido ◽  
R. C. Barker
Keyword(s):  
Quantum Wells ◽  
Strained Layer ◽  
Piezoelectric Field
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