Ion Implantation Doping in Silicon Carbide and Gallium Nitride Electronic Devices

Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are excellent materials for the next generation of high-power and high-frequency electronic devices. In fact, their wide band gap (>3 eV) and high critical electric field (>2 MV/cm) enable superior performances to be obtained with respect to the traditional silicon devices. Hence, today, a variety of diodes and transistors based on SiC and GaN are already available in the market. For the fabrication of these electronic devices, selective doping is required to create either n-type or p-type regions with different functionalities and at different doping levels (typically in the range 1016–1020 cm−3). In this context, due to the low diffusion coefficient of the typical dopant species in SiC, and to the relatively low decomposition temperature of GaN (about 900 °C), ion implantation is the only practical way to achieve selective doping in these materials. In this paper, the main issues related to ion implantation doping technology for SiC and GaN electronic devices are briefly reviewed. In particular, some specific literature case studies are illustrated to describe the impact of the ion implantation doping conditions (annealing temperature, electrical activation and doping profiles, surface morphology, creation of interface states, etc.) on the electrical parameters of power devices. Similarities and differences in the application of ion implantation doping technology in the two materials are highlighted in this paper.

Влияние морфологии буферного слоя AlN на структурное качество полуполярного слоя GaN, выращенного на подложке Si(001), по данным просвечивающей электронной микроскопии

Structural features of the interface between semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7° were studied by high-resolution transmission electron microscopy. The effect of interface morphology on the structural quality of the gallium nitride layer is revealed: faceted structure the surface of the buffer layer reduces the threading dislocations density.

Нелокальная динамика электронов в AlGaN/GaN-транзисторных гетероструктурах

The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It is shown that if, in comparison with a pure bulk material, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field, then for GaN-based heterostructures, the decrease of the drift velocity overshot in the studied cases does not exceed 30%.

Two-dimensional bucking structure induces the ultra-low thermal conductivity: A comparative study of the group GaX (X = N, P, As)

With the successful synthesis of the two-dimensional (2D) gallium nitride (GaN) in a planar honeycomb structure, the phonon transport properties of 2D GaN have been reported. However, it still remains...

Theoretical study of gallium nitride nanocage as a carrier for Cisplatin anticancer drug

In this paper, the possible interactions between cisplatin Cl2H6N2Pt as an anticancer drug and gallium nitride (Ga12N12) nanocage have been investigated using the DFT/b3lyp/lanl2dz(d,p) level of theory. Three different orientations were used to mimic the cisplatin adsorbed on Ga12N12. To investigate the interaction mechanism between the two components, the adsorption energies and thermodynamic parameters, the electronic properties such as the energies and orbitals distribution of the highest occupied molecular orbital (HOMO), the lowest unoccupied molecular orbital (LUMO), the HOMO-LUMO energy gaps (Eg), thermodynamic properties were also investigated. Additionally, some quantum molecular descriptors were calculated to understand molecular reactivity. The main results revealed that the adsorption process of the drug compound on the surface of the nanocage varies with the adsorption site. The process showed that different energies could be obtained, where the highest energy value was when the drug compound was adsorbed with the nanocage at the chlorine atom, with a value of (41.85) kcal/mol. On the other hand, the distance between the drug compound atoms was affected before and after adsorption, which proves the existence of an interaction between the drug compound and the nanocage and considers it as a drug delivery vehicle.