A Fully-Integrated Dual-Band Concurrent CMOS LNA for 2.45/5.25 GHz Applications

2014 ◽  
pp. 409-417
Author(s):  
Hamidreza Ameri Eshghabadi ◽  
Mohd Tafir Mustaffa ◽  
Norlaili Mohd Noh ◽  
Asrulnizam Abd Manaf ◽  
Othman Sidek
Keyword(s):  
Dual Band ◽  
Fully Integrated ◽  
Cmos Lna

scholarly journals A fully integrated dual-band CMOS LNA for IEEE802.16a

2006 ◽  
Vol 3 (22) ◽  
pp. 474-479 ◽  
Author(s):  
F. Kalantari ◽  
N. Masoumi
Keyword(s):  
Dual Band ◽  
Fully Integrated ◽  
Cmos Lna

A Fully Integrated 7.3 kV HBM ESD-Protected Transformer-Based 4.5–6 GHz CMOS LNA

2009 ◽  
Vol 44 (2) ◽  
pp. 344-353 ◽  
Author(s):  
Jonathan Borremans ◽  
Steven Thijs ◽  
Piet Wambacq ◽  
Yves Rolain ◽  
Dimitri Linten ◽  
...  
Keyword(s):  
Fully Integrated ◽  
Cmos Lna

A fully integrated differential CMOS LNA for 3-5-GHz ultrawideband wireless receivers

2006 ◽  
Vol 16 (3) ◽  
pp. 134-136 ◽  
Author(s):  
A. Bevilacqua ◽  
C. Sandner ◽  
A. Gerosa ◽  
A. Neviani
Keyword(s):  
Wireless Receivers ◽  
Fully Integrated ◽  
Cmos Lna ◽  
5 Ghz

scholarly journals Dual-band impedance transformation networks for integrated power amplifiers

2014 ◽  
Vol 8 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Robert Wolf ◽  
Niko Joram ◽  
Stefan Schumann ◽  
Frank Ellinger
Keyword(s):  
Output Power ◽  
Power Amplifiers ◽  
Design Procedure ◽  
Dual Band ◽  
Analysis Method ◽  
Large Signal ◽  
Fully Integrated ◽  
Power Added Efficiency ◽  
Relative Bandwidth ◽  
Measurement Results

This paper shows that the two most common impedance transformation networks for power amplifiers (PAs) can be designed to achieve optimum transformation at two frequencies. Hence, a larger bandwidth for the required impedance transformation ratio is achieved. A design procedure is proposed, which takes imperfections like losses into account. Furthermore, an analysis method is presented to estimate the maximum uncompressed output power of a PA with respect to frequency. Based on these results, a fully integrated PA with a dual-band impedance transformation network is designed and its functionality is proven by large signal measurement results. The amplifier covers the frequency band from 450 MHz to 1.2 GHz (3 dB bandwidth of the output power and efficiency), corresponding to a relative bandwidth of more than 100%. It delivers 23.7 dBm output power in the 1 dB compression point, having a power-added efficiency of 33%.

A Sub-2 dB NF Dual-Band CMOS LNA for CDMA/WCDMA Applications

2008 ◽  
Vol 18 (3) ◽  
pp. 212-214 ◽  
Author(s):  
Hyejeong Song ◽  
Huijung Kim ◽  
Kichon Han ◽  
Jinsung Choi ◽  
Changjoon Park ◽  
...  
Keyword(s):  
Dual Band ◽  
Cmos Lna

scholarly journals A Fully-Integrated Reconfigurable Dual-Band Transceiver for Short Range Wireless Communications in 180 nm CMOS

2015 ◽  
Vol 50 (11) ◽  
pp. 2572-2590 ◽  
Author(s):  
Xiaobao Yu ◽  
Meng Wei ◽  
Yun Yin ◽  
Ying Song ◽  
Siyang Han ◽  
...  
Keyword(s):  
Wireless Communications ◽  
Short Range ◽  
Dual Band ◽  
Fully Integrated
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