wireless receivers
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2021 ◽  
Author(s):  
Mateus Castro ◽  
Raphael Souza ◽  
Agord ◽  
Leandro Manera ◽  
Eduardo Lima

2020 ◽  
Author(s):  
Abhinaya M ◽  
Bhavika B ◽  
Harsh Dashora ◽  
Jitendra Kumar

A Radio frequency filters having applications that demand high performance and intends to contribute in system’s size and cost must be achieved by a different approach. That might be in using an advanced material, planar technology or dielectric resonators, as filter involves in many fields like wireless receivers, transmitters and in multiple locations inside an RF system to shed noise. This paper primarily demonstrates how bandpass filter exhibits itself differently when realized using lumped elements or microstrip transmission line to acquire minimum losses when transmitting high frequency signals over long or short distances in planar technology. And explains in detail to design and simulate microstrip coupled line bandpass filter.


This paper presents the design of a fully-integrated tunable Q-enhanced LNA resonator filter designed to tune the circuit center frequency and quality factor Q. The proposed circuit achieves a 600 MHz 3dB bandwidth tunable center frequency at 2.4 GHz with a 5.5 dB Quality Factor Q tuning range. The proposed circuit utilize a distortion transistor compensator to improve linearity of the circuit. The results show an 18 dBc of third order intermodulation IM3 cancellation. The overall proposed circuit peak gain is 16.5 dB and the minimum NF is 0.94 dB at 2.4 GHz frequency with power consumption of 5.2 mA


IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 197300-197311
Author(s):  
Valentine A. Aalo ◽  
Petros S. Bithas ◽  
George P. Efthymoglou

IEEE Access ◽  
2020 ◽  
pp. 1-1
Author(s):  
Panagiotis Skrimponis ◽  
Navid Hosseinzadeh ◽  
Abbas Khalili ◽  
Elza Erkip ◽  
Mark J. W. Rodwell ◽  
...  

This article presents the Low Noise Amplifier (LNA) design of CMOS Inductorless with noise cancellation (NC) technique for portable wireless receivers. An Inductorless CMOS LNA for multi-standard wireless applications with lessarea, single-chip is presented. This NC technique is used to cancel out the noise involvement in LNAs at the output of matching device. The proposed Inductorless CMOS LNA designed in a CMOS 45nm GPDK technology process. The simulated results within the frequency range of 1.04GHz-1.8GHz are considered here. The maximum gain has achieved 20dB @ 1.04GHz, 23dB @ 1.8GHz and a low NF of 1.2dB @ 1.04GHz, 0.6dB @ 1.8GHz. The input and output reflection coefficients are obtained as less than -10dB it is desirable value to fit in this LNA.


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