The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb and GaAS

Author(s):  
R. A. Stradling
1970 ◽  
Vol 13 (4) ◽  
pp. 415-424 ◽  
Author(s):  
D.J. Dumin
Keyword(s):  

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 188-190 ◽  
Author(s):  
W. Jantsch ◽  
K. Wünstel ◽  
O. Kumagai ◽  
P. Vogl

1982 ◽  
Vol 27 (4) ◽  
pp. 251-256 ◽  
Author(s):  
K. W�nstel ◽  
O. Kumagai ◽  
P. Wagner ◽  
W. Jantsch

1984 ◽  
Vol 142 (1-3) ◽  
pp. A250
Author(s):  
J.M. Mercy ◽  
C. Bousquet ◽  
J.L. Robert ◽  
A. Raymond ◽  
G. Gregoris ◽  
...  

1977 ◽  
Vol 10 (17) ◽  
pp. L473-L476 ◽  
Author(s):  
A M White ◽  
P Porteous ◽  
W F Sherman ◽  
A A Stadtmuller

1991 ◽  
Vol 38-41 ◽  
pp. 231-236 ◽  
Author(s):  
V. Smid ◽  
Jan Zeman ◽  
J. Kristofik ◽  
J.J. Mares ◽  
Yu.V. Vyzhigin ◽  
...  

1996 ◽  
Vol 76 (6) ◽  
pp. 964-967 ◽  
Author(s):  
T. M. Ritter ◽  
B. A. Weinstein ◽  
R. M. Park ◽  
M. C. Tamargo

1990 ◽  
Vol 39 (3) ◽  
pp. 464
Author(s):  
YUAN HAO-XIN ◽  
LI QI-GUANG ◽  
JIANG SHAN ◽  
LU WEI ◽  
TONG FEI-MING ◽  
...  

1984 ◽  
Vol 142 (1-3) ◽  
pp. 298-305 ◽  
Author(s):  
J.M. Mercy ◽  
C. Bousquet ◽  
J.L. Robert ◽  
A. Raymond ◽  
G. Gregoris ◽  
...  

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