The use of hydrostatic pressure and alloying to introduce deep levels in the forbidden gap of InSb and GaAS
2005 ◽
pp. 61-74
1970 ◽
Vol 13
(4)
◽
pp. 415-424
◽
1982 ◽
Vol 27
(4)
◽
pp. 251-256
◽
1977 ◽
Vol 10
(17)
◽
pp. L473-L476
◽
1991 ◽
Vol 38-41
◽
pp. 231-236
◽
1996 ◽
Vol 76
(6)
◽
pp. 964-967
◽