Prediction of intermediate band in Ti/V doped γ-In2S3

We find the band structure of In1.5V0.5S3 with HSE functional, where the vanadium atom introduces an intermediate band inside the forbidden gap in the γ-phase of In2S3.

The spin-polarized electronic and magnetic properties of zinc selenide heavy doped with chromium

Atthe first stage, the structureof theZnSe crystal doped with chromium atoms (ZnCrSe)has been found by optimization procedure. At the second stage, the electronic properties of this material have been evaluated within the two approaches. The exchange-correlation functionals used here are based on the generalized gradient approximation (GGA) and the hybrid functional PBE0. The GGA approach provides the metallic state for electrons with the spin up, and for opposite spin orientation the material ZnCrSe bahaves as semiconductor, with the band gap of 2.48 eV. The hybrid functional approach also gives a gapless state for a spin up electron states, and for a spin down it provides the forbidden gap value of 2.39 eV. The magnetic moment of the unit cell, found with the two functionals, is the same and equals to 4 Bμ(Bohr magnetons). So, the calculations with the two exchange-correlation functionals provide the prediction of half-metallic properties of the ZnCrSe material, which is an interesting candidate for spintronic applications.

The Clampdown Effect: On The Expulsion of Super-Intelligence

There exists an implicit potential limitation in every physical discoveries that has been implemented and understood. However, the limitations can be bounded within a safe limit to prevent any constructing theory to be free from errors. As, it’s the inert nature of the humans, to go far beyond the scope of experimental findings in order to pursue any studies with the sole help of logical reasoning and mathematics, the argument can be prevailed in the form of WEAK Clampdown Effect & STRONG Clampdown Effect. More, the theories are constructed out of physical nature, more the theory gets hypothetical without any finding evidence, but that does or doesn’t actually justify the phenomenon, that too with the more increment of KARDASHEV Scale, more moderate ways of experimentation got developed curbing down the limitations within the human limit of ‘ERRORS’, that does can be neglected by approximation. Relationship being cross-judgmental on the basis of the computational limits and calculation accuracy, leading to a soft singularity, as a warning, that if computer powers cannot be checked on the basis of error approximations, then this may lead to the hitting of a hard singularity, that in phase with the forbidden gap (or after the optimum limit that arises at the core constraints of nature) to prevent the computation being carried off with respect to super-intelligence machines that are cognitive capability oriented future computers responsible for self growth & reproduction with more improvement algorithm, restricting all forms of humanity & constraints the human growth by virtue of limiting capacities of the humans as compared to computers.

Faraday and Kerr Effects in Right and Left-Handed Films and Layered Materials

In the present work, we study the rotations of the polarization of light propagating in right and left-handed films and layered structures. Through the use of complex values representing the rotations we analyze the transmission (Faraday effect) and reflections (Kerr effect) of light. It is shown that the real and imaginary parts of the complex angle of Faraday and Kerr rotations are odd and even functions for the refractive index n, respectively. In the thin film case with left-handed materials there are large resonant enhancements of the reflected Kerr angle that could be obtained experimentally. In the magnetic clock approach, used in the tunneling time problem, two characteristic time components are related to the real and imaginary portions of the complex Faraday rotation angle . The complex angle at the different propagation regimes through a finite stack of alternating right and left-handed materials is analyzed in detail. We found that, in spite of the fact that Re(θ) in the forbidden gap is almost zero, the Im(θ) changes drastically in both value and sign.

Влияние адсорбции кислорода и фтора на электронную структуру поверхности InSb(111)

The projector augmented-wave method was used to study the energetics of oxygen and fluorine bonding on the InSb(111) surface depending on its termination. It is shown that the fluorine adsorption on the In-terminated surface depending on its concentration leads to a partial or complete removal of surface states induced by oxygen adsorption from the forbidden gap. Penetration of both adsorbates into subsurface layers results in breaking of In–Sb bonds and the formation of chemical bonds of fluorine and oxygen with subsurface atoms of the substrate. It is the initial stage of the formation of a fluorine-containing anode oxide layer. In the case of the InSb(111) surface terminated by antimony, oxygen adsorption contributes to a decrease in the density of surface states in the forbidden gap. The general trends in the changes of the electronic structure of the (111) surface during the fluorine and oxygen coadsorption are discussed in a set of III–V semiconductors.

Особенности оптических и энергетических свойств тонких пленок CdSe

The paper presents the results of experimental and theoretical studies of the optical and energy properties of thin CdSe films obtained by the closed space sublimation. The synthesis method, the results of structural and optical studies of thin CdSe films deposited on the surface of a quartz substrate are presented. The quality of the films was analyzed by x-ray diffraction, energy dispersive analysis and scanning electron microscopy. Within the framework of the pseudopotential method, the dynamics of changes in the parameters of the CdSe films electronic subsystem is theoretically studied. The direct-gap nature of the forbidden gap of the film is established. Based on the density of states, the genesis of the conduction band and the valence band is established. Using the Kramers – Kronig relation, we obtained spectra of optical dielectric functions, optical reflection, refractive and extinction indexes, which satisfactorily correlate with the obtained experimental data.

Кремниевые светодиоды с люминесценцией (113) дефектов

Silicon light-emitting diodes with luminescence associated with (113) defects have been fabricated using implantation of 350 keV oxygen ions at the dose of 3.7∙1014 cm-2 and subsequent annealing at 700ᵒC for 1 h in a chlorine-containing atmosphere. Electroluminescence was studied in wide ranges of temperature and an excitation power. The line associated with (113) defects dominates in all the spectra. The temperature dependence of the line intensity depends on the excitation power in the range of low temperatures: an increase of the intensity with activation energy of 25 meV is observed at low current density and, with the increasing current density, a rise of the intensity is not observed. At higher temperatures, a decrease of the intensity with activation energy of 59 meV occurs regardless of a current density. With the increasing temperature, the peak of the line shifts by the same energy as the forbidden gap width, while the half width of the line grows linearly.

Straightening of light in a one dimensional dilute photonic crystal

Light transport in a dilute photonic crystal is considered. The analytical expression for the transmission coefficient is derived. Straightening of light under certain conditions in a one-dimensional photonic crystal is predicted. Such behavior is caused by the formation of a localized state in transversal motion. The main contribution to the central diffracted wave transmission coefficient is due to states, that either close to the conductance band’s bottom or deeply localized in the forbidden gap. Both these states suppress mobility in the transverse direction and force light to be straightened. Straightening of light in the optical region along with small reflection make these systems very promising for use in solar cells.

Charge Transport and Thermo-emf in TlFe1−xGaxS2 Solid Solutions

TlFe1−xGaxS2 solid solutions have been prepared by direct elemental synthesis. The dependences of the thermoelectric properties and DC conductivity on temperature have been studied in TlFe1−xGaxS2 solid solutions. In terms of hopping mechanism of charge transfer, the parameters of localized states in the forbidden gap of TlFe1−xGaxS2 have been evaluated. The type of conductivity has been determined from the temperature dependences of thermoelectric power of TlFe1−xGaxS2 solid solutions.