Solid-State Electronics
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Published By Elsevier

0038-1101

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Editorial Board

Solid-State Electronics ◽

10.1016/s0038-1101(22)00004-1 ◽

2022 ◽

Vol 188 ◽

pp. 108232

Design of Operational Transconductance Amplifier with Gate-All-Around Nanosheet MOSFET using Experimental Data from Room Temperature to 200 oC

Solid-State Electronics ◽

10.1016/j.sse.2022.108238 ◽

2022 ◽

pp. 108238

Author(s):

Júlia C.S. Sousa ◽

Welder F. Perina ◽

Roberto Rangel ◽

Eddy Simoen ◽

Anabela Veloso ◽

...

Keyword(s):

Experimental Data ◽

Room Temperature ◽

Operational Transconductance Amplifier ◽

Transconductance Amplifier

Frequency doubler based on unipolar thin-film-transistor technologies

Solid-State Electronics ◽

10.1016/j.sse.2022.108237 ◽

2022 ◽

pp. 108237

Author(s):

Eun-Hye Ko ◽

Chang-Hyun Kim

Keyword(s):

Thin Film ◽

Thin Film Transistor ◽

Frequency Doubler

High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation

Solid-State Electronics ◽

10.1016/j.sse.2021.108226 ◽

2021 ◽

pp. 108226

Author(s):

Leilei Chen ◽

Jinxiao Li ◽

Yanping Wang ◽

Huiwei Feng ◽

Dawei Yan ◽

...

Keyword(s):

Ion Implantation

A Differential OTP Memory based highly Unique and Reliable PUF at 180 nm technology node

Solid-State Electronics ◽

10.1016/j.sse.2021.108207 ◽

2021 ◽

pp. 108207

Author(s):

P. Malviya ◽

S. Sadana ◽

A. Lele ◽

K. Priyadarshi ◽

A. Sharma ◽

...

Keyword(s):

Technology Node

Channel doping effects in negative capacitance field-effect transistors

Solid-State Electronics ◽

10.1016/j.sse.2021.108181 ◽

2021 ◽

Vol 186 ◽

pp. 108181

Author(s):

Baoliang Liu ◽

Xiaoqing Huang ◽

Yanxin Jiao ◽

Ning Feng ◽

Xuhui Chen ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Doping Effects

RC-Diode ESD Protection Design for High-Frequency Applications

Solid-State Electronics ◽

10.1016/j.sse.2021.108222 ◽

2021 ◽

pp. 108222

Author(s):

Chun-Yu Lin ◽

Yi-Quan Fu

Keyword(s):

High Frequency ◽

Esd Protection

Influence of sub-band gap density of states on the electrical performance of amorphous SiZnSnO thin film transistor

Solid-State Electronics ◽

10.1016/j.sse.2021.108219 ◽

2021 ◽

pp. 108219

Author(s):

D. Saha ◽

Sang Yeol Lee

Keyword(s):

Thin Film ◽

Band Gap ◽

Density Of States ◽

Thin Film Transistor ◽

Electrical Performance

A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier

Solid-State Electronics ◽

10.1016/j.sse.2021.108218 ◽

2021 ◽

pp. 108218

Author(s):

Adelmo Ortiz-Conde ◽

Carlos Ávila-Avendaño ◽

Jesús A. Caraveo-Frescas ◽

Manuel A. Quevedo-López ◽

Francisco J. García-Sánchez

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Cmos Inverter

Synthesis and characterization of ZnO nanoflowers by using simple spray pyrolysis technique

Solid-State Electronics ◽

10.1016/j.sse.2021.108225 ◽

2021 ◽

pp. 108225

Author(s):

Ahmed Fattah Abdulrahman ◽

N.M. Abd-Alghafour

Keyword(s):

Spray Pyrolysis ◽

Spray Pyrolysis Technique ◽

Synthesis And Characterization