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Solid-State Electronics
Latest Publications
TOTAL DOCUMENTS
14761
(FIVE YEARS 567)
H-INDEX
140
(FIVE YEARS 7)
Published By Elsevier
0038-1101
Latest Documents
Most Cited Documents
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Latest Documents
Most Cited Documents
Contributed Authors
Related Sources
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Solid-State Electronics
◽
10.1016/s0038-1101(22)00004-1
◽
2022
◽
Vol 188
◽
pp. 108232
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Design of Operational Transconductance Amplifier with Gate-All-Around Nanosheet MOSFET using Experimental Data from Room Temperature to 200 oC
Solid-State Electronics
◽
10.1016/j.sse.2022.108238
◽
2022
◽
pp. 108238
Author(s):
Júlia C.S. Sousa
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Welder F. Perina
◽
Roberto Rangel
◽
Eddy Simoen
◽
Anabela Veloso
◽
...
Keyword(s):
Experimental Data
◽
Room Temperature
◽
Operational Transconductance Amplifier
◽
Transconductance Amplifier
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Frequency doubler based on unipolar thin-film-transistor technologies
Solid-State Electronics
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10.1016/j.sse.2022.108237
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2022
◽
pp. 108237
Author(s):
Eun-Hye Ko
◽
Chang-Hyun Kim
Keyword(s):
Thin Film
◽
Thin Film Transistor
◽
Frequency Doubler
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A Differential OTP Memory based highly Unique and Reliable PUF at 180 nm technology node
Solid-State Electronics
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10.1016/j.sse.2021.108207
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2021
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pp. 108207
Author(s):
P. Malviya
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S. Sadana
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A. Lele
◽
K. Priyadarshi
◽
A. Sharma
◽
...
Keyword(s):
Technology Node
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Channel doping effects in negative capacitance field-effect transistors
Solid-State Electronics
◽
10.1016/j.sse.2021.108181
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2021
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Vol 186
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pp. 108181
Author(s):
Baoliang Liu
◽
Xiaoqing Huang
◽
Yanxin Jiao
◽
Ning Feng
◽
Xuhui Chen
◽
...
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Negative Capacitance
◽
Doping Effects
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High-densities of free holes in homoepitaxial n-GaN induced by fluorine-plasma ion implantation
Solid-State Electronics
◽
10.1016/j.sse.2021.108226
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2021
◽
pp. 108226
Author(s):
Leilei Chen
◽
Jinxiao Li
◽
Yanping Wang
◽
Huiwei Feng
◽
Dawei Yan
◽
...
Keyword(s):
Ion Implantation
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RC-Diode ESD Protection Design for High-Frequency Applications
Solid-State Electronics
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10.1016/j.sse.2021.108222
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2021
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pp. 108222
Author(s):
Chun-Yu Lin
◽
Yi-Quan Fu
Keyword(s):
High Frequency
◽
Esd Protection
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Influence of sub-band gap density of states on the electrical performance of amorphous SiZnSnO thin film transistor
Solid-State Electronics
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10.1016/j.sse.2021.108219
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2021
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pp. 108219
Author(s):
D. Saha
◽
Sang Yeol Lee
Keyword(s):
Thin Film
◽
Band Gap
◽
Density Of States
◽
Thin Film Transistor
◽
Electrical Performance
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A polylogarithmic model for thin-film transistors used in a CMOS inverter amplifier
Solid-State Electronics
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10.1016/j.sse.2021.108218
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2021
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pp. 108218
Author(s):
Adelmo Ortiz-Conde
◽
Carlos Ávila-Avendaño
◽
Jesús A. Caraveo-Frescas
◽
Manuel A. Quevedo-López
◽
Francisco J. García-Sánchez
Keyword(s):
Thin Film
◽
Thin Film Transistors
◽
Cmos Inverter
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Synthesis and characterization of ZnO nanoflowers by using simple spray pyrolysis technique
Solid-State Electronics
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10.1016/j.sse.2021.108225
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2021
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pp. 108225
Author(s):
Ahmed Fattah Abdulrahman
◽
N.M. Abd-Alghafour
Keyword(s):
Spray Pyrolysis
◽
Spray Pyrolysis Technique
◽
Synthesis And Characterization
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