Improvement of the direct optical transition probability in Si by wavefunction engineering

2006 ◽  
Vol 82 (4) ◽  
pp. 627-631
Author(s):  
R. Stömmer
2003 ◽  
Vol 798 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoshinobu Kawaguchi ◽  
Shigeo Fujita

ABSTRACTThe dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.


2006 ◽  
Vol 10 (3) ◽  
pp. xcvii-xcviii
Author(s):  
Jianguo Pan ◽  
Zhoubin Lin ◽  
Lizhen Zhang ◽  
Guofu Wang

2004 ◽  
Vol 22 (1) ◽  
pp. 80-82 ◽  
Author(s):  
Li Bao-Zeng ◽  
Zheng Zhi-Qiang ◽  
Yang Ji-Wen ◽  
Li Ke-Wen ◽  
Jiang Hua ◽  
...  

2002 ◽  
Vol 6 (5-6) ◽  
pp. 281-283 ◽  
Author(s):  
Shangke Pan ◽  
Zushu Hu ◽  
Zhoubin Lin ◽  
Guofu Wang

1999 ◽  
Vol 60 (23) ◽  
pp. 15469-15471 ◽  
Author(s):  
Guofu Wang ◽  
Wenzhi Chen ◽  
Zhoubin Li ◽  
Zushu Hu

2004 ◽  
Vol 21 (2) ◽  
pp. 291-294 ◽  
Author(s):  
Zheng Zhi-Qiang ◽  
Liang Hao ◽  
Ming Hai ◽  
Zhang Qi-Jin ◽  
Han Xin-Hai ◽  
...  

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