Silicene dynamic optical response in the presence of external electric and exchange fields

We investigate the dynamic optical transition of monolayer silicene in the presence of external electric and exchange fields within the low-energy tight-binding model. Applying external electric and exchange fields breaks the silicene band structure spin and valley degeneracies. Three phases of silicene corresponding to different strengths of perpendicular electric field with respect to the spin-orbit coupling (∆z < ∆so, ∆z = ∆so and ∆z > ∆so) are considered. We obtain the spinand valley-dependent optical responses to the incoming circularly polarized light using the Kubo formula. We show and discuss how the magnitude and direction of the transverse and longitudinal optical responses of such a system change with the electric and exchange fields. Our calculations suggest that the intraband part of the longitudinal optical response as well as the initial point of the interband part have strong dependencies on the exchange field. Furthermore, we show that one of the spin subbands plays a dominant role in the response to polarized light. Depending on the type of incident light polarization, the dominant subband may change. Our results shed light on the relation between silicene dynamic optical responses and externally applied fields.

Probing topological quantum phase transitions via photonic spin Hall effects in spin-orbit coupled 2D quantum materials

Topological photonics is an emerging field in photonics in which various topological and geometrical ideas are used to manipulate and control the behavior of light photons. The interplay between topological matter and the spin degree of freedom of photons provides new opportunities for achieving spin-based photonics applications. In this paper, the photonic spin Hall effect (PSHE) of reflected light from the surface of the topological silicene quantum systems subjected to external electric and radiation fields in the terahertz regime is theoretically investigated. By tuning the external electric and the applied laser fields, we can drive the silicenic system through different topological quantum phase transitions. We demonstrate that the in-plane and transverse spatial spin dependent shifts exhibit extreme values near Brewster’s angles and away from the optical transition frequencies. We reveal that the photonic spin Hall shifts are sensitive to the spin and valley indices as well as to the number of closed gaps. By incorporating the quantum weak value measurement techniques, the photonic spin Hall effect greatly impact the research in spinoptics, spintronics, and valleytronics.

Epoxy/Silicone Blend Loaded with N-Doped CNT Composites: Study on the Optoelectronic Properties

Thin films of epoxy/silicone loaded with N-CNT were prepared by a method of sol-gel and deposited on ITO glass substrates at room temperature. The properties of the loaded monolayer samples (0.00, 0.07, 0.1, and 0.2 wt% N-CNTs) were analyzed by UV-visible spectroscopy. The transmittance for the unloaded thin films is 88%, and an average transmittance for the loaded thin film is about 42 to 67% in the visible range. The optical properties were studied from UV-visible spectroscopy to examine the transmission spectrum, optical gap, Tauc verified optical gap, and Urbach energy, based on the envelope method proposed by Swanepoel (1983). The results indicate that the adjusted optical gap of the film has a direct optical transition with an optical gap of 3.61 eV for unloaded thin films and 3.55 to 3.19 eV for loaded thin films depending on the loading rate. The optical gap is appropriately adapted to the direct transition model proposed by Tauc et al. (1966); its value was 3.6 eV for unloaded thin films and from 3.38 to 3.1 eV for loaded thin films; then, we determined the Urbach energy which is inversely variable with the optical gap, where Urbach’s energy is 0.19 eV for the unloaded thin films and varies from 0.43 to 1.33 eV for the loaded thin films with increasing rate of N-CNTs. Finally, nanocomposite epoxy/silicone N-CNT films can be developed as electrically conductive materials with specific optical characteristics, giving the possibility to be used in electrooptical applications.

Titanium Nitride as a Plasmonic Material from Near-Ultraviolet to Very-Long-Wavelength Infrared Range

Titanium nitride is a well-known conductive ceramic material that has recently experienced resumed attention because of its plasmonic properties comparable to metallic gold and silver. Thus, TiN is an attractive alternative for modern and future photonic applications that require compatibility with the Complementary Metal-Oxide-Semiconductor (CMOS) technology or improved resistance to temperatures or radiation. This work demonstrates that polycrystalline TiNx films sputtered on silicon at room temperature can exhibit plasmonic properties continuously from 400 nm up to 30 μm. The films’ composition, expressed as nitrogen to titanium ratio x and determined in the Secondary Ion Mass Spectroscopy (SIMS) experiment to be in the range of 0.84 to 1.21, is essential for optimizing the plasmonic properties. In the visible range, the dielectric function renders the interband optical transitions. For wavelengths longer than 800 nm, the optical properties of TiNx are well described by the Drude model modified by an additional Lorentz term, which has to be included for part of the samples. The ab initio calculations support the experimental results both in the visible and infra-red ranges; particularly, the existence of a very low energy optical transition is predicted. Some other minor features in the dielectric function observed for the longest wavelengths are suspected to be of phonon origin.

Photo-exfoliation of MoS2 quantum dots from nanosheets: an in-situ transmission electron microscopy study

Fabrication of transition metal dichalcogenide (TMD) quantum dots (QDs) is complex and requires submerging of powders in binary solvents and the constant tuning of wavelength and pulsed frequency of light to achieve a desired reaction. Instead of liquid state photoexfoliation, we utilize infrared laser irradiation of free-standing MoS2 flakes in transmission electron microscope (TEM) to achieve solid-state multi-level photoexfoliation of QDs. By investigating the steps involved in photochemical reaction between the surface of MoS2 and the laser beam, we gain insight into each step of the photoexfoliation mechanism and observe high yield production of QDs, led by an inhomogeneous crystalline size distribution. Additionally, by using a laser with a lower energy than the indirect optical transition of bulk MoS2, we conclude that the underlying phenomena behind the photoexfoliation is from multi-photon absorption achieved at high optical outputs from the laser source. These findings provide an environmentally friendly synthesis method to fabricate QDs for potential applications in biomedicine, optoelectronics, and fluorescence sensing.