High temperature ac conductivity relaxations in dielectric ceramics: grain boundary/intergranular phase effects

2020 ◽  
Vol 31 (19) ◽  
pp. 16468-16478
Author(s):  
Xuetong Zhao ◽  
Yupeng Li ◽  
Lulu Ren ◽  
Chao Xu ◽  
Jianjie Sun ◽  
...  
2001 ◽  
Vol 670 ◽  
Author(s):  
Min-Joo Kim ◽  
Hyo-Jick Choi ◽  
Dae-Hong Ko ◽  
Ja-Hum Ku ◽  
Siyoung Choi ◽  
...  

ABSTRACTThe silicidation reactions and thermal stability of Co silicide formed from Co-Ta/Si systems have been investigated. In case of Co-Ta alloy process, the formation of low resistive CoSi2phase is delayed to about 660°C, as compared to conventional Co/Si system. Moreover, the presence of Ta in Co-Ta alloy films reduces the silicidation reaction rate, resulting in the strong preferential orientation in CoSi2 films. Upon high temperature post annealing in the furnace, the sheet resistance of Co-silicide formed from Co/Si systems increases significantly, while that of Co-Ta/Si systems maintains low. This is due to the formation of TaSi2 at the grain boundaries and surface of Co-silicide films, which prevents the grain boundary migration thereby slowing the agglomeration. Therefore, from our research, increased thermal stability of Co-silicide films was successfully obtained from Co-Ta alloy process.


Metal Science ◽  
1981 ◽  
Vol 15 (2) ◽  
pp. 73-78 ◽  
Author(s):  
K. U. Snowden ◽  
D. S. Hughes ◽  
P. A. Stathers

2019 ◽  
Vol 778 ◽  
pp. 224-233 ◽  
Author(s):  
C.N. Athreya ◽  
K. Deepak ◽  
Dong-Ik Kim ◽  
B. de Boer ◽  
Sumantra Mandal ◽  
...  

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