Vacancy-induced 2 × 2 reconstruction of the Si-terminated 3C SiC(111) surface: ab initio calculations of the atomic and electronic structure

1995 ◽  
Vol 331-333 ◽  
pp. 1105-1109 ◽  
Author(s):  
Bernd Wenzien ◽  
Peter Käckell ◽  
Friedhelm Bechstedt
2010 ◽  
Vol 16 (S2) ◽  
pp. 1822-1823
Author(s):  
P Plachinda ◽  
S Rouvimov ◽  
G Nandamuri ◽  
R Solanki ◽  
K Langworthy

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.


2004 ◽  
Vol 83 (10) ◽  
pp. 2449-2454 ◽  
Author(s):  
Rachid Belkada ◽  
Toshiya Shibayanagi ◽  
Masaaki Naka ◽  
Masanori Kohyama

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