Controlled hydrogen partial pressure in a field ion microscope

Author(s):  
E W Müller ◽  
S Nakamura ◽  
S B McLane ◽  
O Nishikawa

2010 ◽  
Vol 24 (2) ◽  
pp. 772-784 ◽  
Author(s):  
M. Mapiour ◽  
V. Sundaramurthy ◽  
A. K. Dalai ◽  
J. Adjaye




1993 ◽  
Vol 312 ◽  
Author(s):  
D. P. Adamst ◽  
D. J. Eaglesham ◽  
S. M. Yalisove

AbstractHydrogen is shown to influence the surface roughness during low temperature Si MBE. Small partial pressures (1 × 10-7 Torr) of deuterium, introduced during Si growth at 310°C, are sufficient to increase the surface width to ∼30 Å before breakdown of epitaxy. This work is consistent with previous studies of the dependence of epitaxial thickness on hydrogen partial pressure and supports a model in which surface roughening leads to the breakdown of epitaxy.



1999 ◽  
Vol 348 (1-2) ◽  
pp. 74-78 ◽  
Author(s):  
A Achiq ◽  
R Rizk ◽  
F Gourbilleau ◽  
P Voivenel


Sign in / Sign up

Export Citation Format

Share Document